Semiconductor Chip and Method for Manufacturing the Same

ABSTRACT

Gate structures are positioned within a region in accordance with a gate horizontal grid that includes at least seven gate gridlines separated from each other by a gate pitch of less than or equal to about 193 nanometers. Each gate structure has a substantially rectangular shape with a width of less than or equal to about 45 nanometers and is positioned to extend lengthwise along a corresponding gate gridline. Each gate gridline has at least one gate structure positioned thereon. A first-metal layer is formed above top surfaces of the gate structures within the region and includes first-metal structures positioned in accordance with a first-metal vertical grid that includes at least eight first-metal gridlines. Each first-metal structure has a substantially rectangular shape and is positioned to extend along a corresponding first-metal gridline. At least six contact structures of substantially rectangular shape contact the at least six gate structures.

CLAIM OF PRIORITY

This application is a continuation application under 35 U.S.C. 120 ofprior U.S. application Ser. No. 15/263,282, filed on Sep. 12, 2016(Attorney Docket No. TELAP004AC80), which is a continuation applicationunder 35 U.S.C. 120 of prior U.S. application Ser. No. 14/711,731, filedon May 13, 2015, issued as U.S. Pat. No. 9,443,947, on Sep. 13, 2016(Attorney Docket No. TELAP004AC76), which is a continuation applicationunder 35 U.S.C. 120 of prior U.S. application Ser. No. 13/774,919, filedon Feb. 22, 2013 (Attorney Docket No. TELAP004AC62), which is acontinuation application under 35 U.S.C. 120 of prior U.S. applicationSer. No. 12/572,225, filed on Oct. 1, 2009, issued as U.S. Pat. No.8,436,400, on May 7, 2013 (Attorney Docket No. TELAP004AC55), which is acontinuation application under 35 U.S.C. 120 of prior U.S. applicationSer. No. 12/212,562, filed Sep. 17, 2008, issued as U.S. Pat. No.7,842,975, on Nov. 30, 2010 (Attorney Docket No. BECKP004AC1), which isa continuation application under 35 U.S.C. 120 of prior U.S. applicationSer. No. 11/683,402, filed Mar. 7, 2007, issued as U.S. Pat. No.7,446,352, on Nov. 4, 2008 (Attorney Docket No. BECKP004A), which claimspriority under 35 U.S.C. 119(e) to U.S. Provisional Patent ApplicationNo. 60/781,288, filed Mar. 9, 2006 (Attorney Docket No. BECKP004+). Eachof the above-identified applications is incorporated herein by referencein its entirety for all purposes.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is related to each application identified in the tablebelow. The disclosure of each application identified in the table belowis incorporated herein by reference in its entirety.

Attorney Docket No. Application No. Filing Date TELAP004AC2 12/561,207Sep. 16, 2009 TELAP004AC3 12/561,216 Sep. 16, 2009 TELAP004AC412/561,220 Sep. 16, 2009 TELAP004AC5 12/561,224 Sep. 16, 2009TELAP004AC6 12/561,229 Sep. 16, 2009 TELAP004AC7 12/561,234 Sep. 16,2009 TELAP004AC8 12/561,238 Sep. 16, 2009 TELAP004AC9 12/561,243 Sep.16, 2009 TELAP004AC10 12/561,246 Sep. 16, 2009 TELAP004AC11 12/561,247Sep. 16, 2009 TELAP004AC12 12/563,031 Sep. 18, 2009 TELAP004AC1312/563,042 Sep. 18, 2009 TELAP004AC14 12/563,051 Sep. 18, 2009TELAP004AC15 12/563,056 Sep. 18, 2009 TELAP004AC16 12/563,061 Sep. 18,2009 TELAP004AC17 12/563,063 Sep. 18, 2009 TELAP004AC18 12/563,066 Sep.18, 2009 TELAP004AC19 12/563,074 Sep. 18, 2009 TELAP004AC20 12/563,076Sep. 18, 2009 TELAP004AC21 12/563,077 Sep. 18, 2009 TELAP004AC2212/567,528 Sep. 25, 2009 TELAP004AC23 12/567,542 Sep. 25, 2009TELAP004AC24 12/567,555 Sep. 25, 2009 TELAP004AC25 12/567,565 Sep. 25,2009 TELAP004AC26 12/567,574 Sep. 25, 2009 TELAP004AC27 12/567,586 Sep.25, 2009 TELAP004AC28 12/567,597 Sep. 25, 2009 TELAP004AC29 12/567,602Sep. 25, 2009 TELAP004AC30 12/567,609 Sep. 25, 2009 TELAP004AC3112/567,616 Sep. 25, 2009 TELAP004AC32 12/567,623 Sep. 25, 2009TELAP004AC33 12/567,630 Sep. 25, 2009 TELAP004AC34 12/567,634 Sep. 25,2009 TELAP004AC35 12/567,641 Sep. 25, 2009 TELAP004AC36 12/567,648 Sep.25, 2009 TELAP004AC37 12/567,654 Sep. 25, 2009 TELAP004AC38 12/571,343Sep. 30, 2009 TELAP004AC39 12/571,351 Sep. 30, 2009 TELAP004AC4012/571,357 Sep. 30, 2009 TELAP004AC41 12/571,998 Oct. 1, 2009TELAP004AC42 12/572,011 Oct. 1, 2009 TELAP004AC43 12/572,022 Oct. 1,2009 TELAP004AC44 12/572,046 Oct. 1, 2009 TELAP004AC45 12/572,055 Oct.1, 2009 TELAP004AC46 12/572,061 Oct. 1, 2009 TELAP004AC47 12/572,068Oct. 1, 2009 TELAP004AC48 12/572,077 Oct. 1, 2009 TELAP004AC4912/572,091 Oct. 1, 2009 TELAP004AC50 12/572,194 Oct. 1, 2009TELAP004AC51 12/572,201 Oct. 1, 2009 TELAP004AC52 12/572,212 Oct. 1,2009 TELAP004AC53 12/572,218 Oct. 1, 2009 TELAP004AC54 12/572,221 Oct.1, 2009 TELAP004AC55 12/572,225 Oct. 1, 2009 TELAP004AC56 12/572,228Oct. 1, 2009 TELAP004AC57 12/572,229 Oct. 1, 2009 TELAP004AC5812/572,232 Oct. 1, 2009 TELAP004AC59 12/572,237 Oct. 1, 2009TELAP004AC60 12/572,239 Oct. 1, 2009 TELAP004AC61 12/572,243 Oct. 1,2009 TELAP004AC62 13/774,919 Feb. 22, 2013 TELAP004AC63 13/774,940 Feb.22, 2013 TELAP004AC64 13/774,954 Feb. 22, 2013 TELAP004AC65 13/774,970Feb. 22, 2013 TELAP004AC66 13/827,615 Mar. 14, 2013 TELAP004AC6713/827,755 Mar. 14, 2013 TELAP004AC68 13/834,302 Mar. 15, 2013TELAP004AC69 13/837,123 Mar. 15, 2013 TELAP004AC75 14/304,778 Jun. 13,2014 TELAP004AC76 14/711,731 May 13, 2015 TELAP004AC77 14/731,316 Jun.4, 2015 TELAP004AC78 14/946,292 Nov. 19, 2015 TELAP004AC79 15/344,452Nov. 4, 2016 TELAP004AC80 15/263,282 Sep. 12, 2016 TELAP004AC8115/457,920 Mar. 13/2017 BECKP004B 12/013,342 Jan. 11, 2008 BECKP004B.C113/073,994 Mar. 28, 2011 BECKP004C 12/013,356 Jan. 11, 2008 BECKP004C.C113/047,474 Mar. 14, 2011 BECKP004C.C2 14/276,528 May 13, 2014 BECKP004D12/013,366 Jan. 11, 2008 BECKP004D.C1 13/007,582 Jan. 14, 2011BECKP004D.C2 13/007,584 Jan. 14, 2011 TELAP014 12/363,705 Jan. 30, 2009TELAP014.D1 13/897,307 May 17, 2013 TELAP014.D1.C1 14/216,891 Mar. 17,2014 TELAP014.D1.C2 14/949,761 Nov. 23, 2015 TELAP015A 12/402,465 Mar.11, 2009 TELAP015AC1 12/753,711 Apr. 2, 2010 TELAP015AC2 12/753,727 Apr.2, 2010 TELAP015AC3 12/753,733 Apr. 2, 2010 TELAP015AC4 12/753,740 Apr.2, 2010 TELAP015AC5 12/753,753 Apr. 2, 2010 TELAP015AC6 12/753,758 Apr.2, 2010 TELAP015AC6A 13/741,298 Jan. 14, 2013 TELAP015AC7 12/753,766Apr. 2, 2010 TELAP015AC7A 13/589,028 Aug. 17, 2012 TELAP015AC812/753,776 Apr. 2, 2010 TELAP015AC9 12/753,789 Apr. 2, 2010 TELAP015AC1012/753,793 Apr. 2, 2010 TELAP015AC11 12/753,795 Apr. 2, 2010TELAP015AC12 12/753,798 Apr. 2, 2010 TELAP015AC12A 13/741,305 Jan. 14,2013 TELAP015AC13 12/753,805 Apr. 2, 2010 TELAP015AC14 12/753,810 Apr.2, 2010 TELAP015AC15 12/753,817 Apr. 2, 2010 TELAP015AC16 12/754,050Apr. 5, 2010 TELAP015AC17 12/754,061 Apr. 5, 2010 TELAP015AC1812/754,078 Apr. 5, 2010 TELAP015AC19 12/754,091 Apr. 5, 2010TELAP015AC20 12/754,103 Apr. 5, 2010 TELAP015AC21 12/754,114 Apr. 5,2010 TELAP015AC22 12/754,129 Apr. 5, 2010 TELAP015AC23 12/754,147 Apr.5, 2010 TELAP015AC24 12/754,168 Apr. 5, 2010 TELAP015AC25 12/754,215Apr. 5, 2010 TELAP015AC26 12/754,233 Apr. 5, 2010 TELAP015AC2712/754,351 Apr. 5, 2010 TELAP015AC27A 13/591,141 Aug. 21, 2012TELAP015AC28 12/754,384 Apr. 5, 2010 TELAP015AC29 12/754,563 Apr. 5,2010 TELAP015AC30 12/754,566 Apr. 5, 2010 TELAP015AC31 13/831,530 Mar.14, 2013 TELAP015AC32 13/831,605 Mar. 15, 2013 TELAP015AC33 13/831,636Mar. 15, 2013 TELAP015AC34 13/831,664 Mar. 15, 2013 TELAP015AC3513/831,717 Mar. 15, 2013 TELAP015AC36 13/831,742 Mar. 15, 2013TELAP015AC37 13/831,811 Mar. 15, 2013 TELAP015AC38 13/831,832 Mar. 15,2013 TELAP015AC40 14/242,308 Apr. 1, 2014 TELAP015AC45 14/273,483 May 8,2014 TELAP015AC46 14/303,587 Jun. 12, 2014 TELAP015AC47 14/476,511 Sep.3, 2014 TELAP015AC48 14/642,633 Mar. 9, 2015 TELAP015AC49 14/945,361Nov. 18, 2015 TELAP015AC52 15/389,883 Dec. 23, 2016 TELAP016 12/399,948Mar. 7, 2009 TELAP017 12/411,249 Mar. 25, 2009 TELAP017.D 13/085,447Apr. 12, 2011 TELAP017.D.C1 13/918,890 Jun. 14, 2013 TELAP017.D.C214/298,206 Jun. 6, 2014 TELAP017.D.C3 15/181,157 Jun. 13, 2016 TELAP01812/484,130 Jun. 12, 2009 TELAP019 12/479,674 Jun. 5, 2009 TELAP02012/481,445 Jun. 9, 2009 TELAP020.C1 13/898,155 May 20, 2013 TELAP02112/497,052 Jul. 2, 2009 TELAP021C1 13/540,529 Jul. 2, 2012 TELAP021C214/040,590 Sep. 27, 2013 TELAP021C3 14/605,946 Jan. 26, 2015 TELAP021C415/243,748 Aug. 22, 2016 TELAP022A 12/466,335 May 14, 2009 TELAP022A.C114/987,723 Jan. 4, 2016 TELAP022A.C2 15/243,886 Aug. 22, 2016 TELAP022B12/466,341 May 14, 2009 TELAP023 12/512,932 Jul. 30, 2009 TELAP023.D114/834,295 Aug. 24, 2015 TELAP048 12/435,672 May 5, 2009 TELAP048.DIV14/181,556 Feb. 14, 2014 TELAP049 12/775,429 May 6, 2010 TELAP05112/904,134 Oct. 13, 2010 TELAP051.D1 14/187,171 Feb. 21, 2014TELAP051.D1.C1 15/051,532 Feb. 23, 2016 TELAP053 13/373,470 Nov. 14,2011 TELAP053C1 14/875,570 Oct. 5, 2015 TELAP054 13/312,673 Dec. 6, 2011TELAP054.C1 14/481,845 Sep. 9, 2014 TELAP055 13/473,439 May 16, 2012TELAP055.C1 14/187,088 Feb. 21, 2014 TELAP055.C2 15/150,152 May 9, 2016TELAP056 13/740,191 Jan. 12, 2013 TELAP056C1 13/841,951 Mar. 15, 2013

BACKGROUND

A push for higher performance and smaller die size drives thesemiconductor industry to reduce circuit chip area by approximately 50%every two years. The chip area reduction provides an economic benefitfor migrating to newer technologies. The 50% chip area reduction isachieved by reducing the feature sizes between 25% and 30%. Thereduction in feature size is enabled by improvements in manufacturingequipment and materials. For example, improvement in the lithographicprocess has enabled smaller feature sizes to be achieved, whileimprovement in chemical mechanical polishing (CMP) has in-part enabled ahigher number of interconnect layers.

In the evolution of lithography, as the minimum feature size approachedthe wavelength of the light source used to expose the feature shapes,unintended interactions occurred between neighboring features. Todayminimum feature sizes are approaching 45 nm (nanometers), while thewavelength of the light source used in the photolithography processremains at 193 nm. The difference between the minimum feature size andthe wavelength of light used in the photolithography process is definedas the lithographic gap. As the lithographic gap grows, the resolutioncapability of the lithographic process decreases.

An interference pattern occurs as each shape on the mask interacts withthe light. The interference patterns from neighboring shapes can createconstructive or destructive interference. In the case of constructiveinterference, unwanted shapes may be inadvertently created. In the caseof destructive interference, desired shapes may be inadvertentlyremoved. In either case, a particular shape is printed in a differentmanner than intended, possibly causing a device failure. Correctionmethodologies, such as optical proximity correction (OPC), attempt topredict the impact from neighboring shapes and modify the mask such thatthe printed shape is fabricated as desired. The quality of the lightinteraction prediction is declining as process geometries shrink and asthe light interactions become more complex.

In view of the foregoing, a solution is needed for managing lithographicgap issues as technology continues to progress toward smallersemiconductor device features sizes.

SUMMARY

In one embodiment, an integrated circuit is disclosed to include a firstgate electrode feature of a first gate electrode track. The first gateelectrode feature of the first gate electrode track forms a firstn-channel transistor as it crosses an n-diffusion region. The integratedcircuit also includes a second gate electrode feature of the first gateelectrode track. The second gate electrode feature of the first gateelectrode track forms a first p-channel transistor as it crosses ap-diffusion region. The first and second gate electrode features of thefirst gate electrode track are separated by a first end-to-end spacing.The integrated circuit also includes a first gate electrode feature of asecond gate electrode track. The first gate electrode feature of thesecond gate electrode track forms a second n-channel transistor as itcrosses the n-diffusion region. The integrated circuit also includes asecond gate electrode feature of the second gate electrode track. Thesecond gate electrode feature of the second gate electrode track forms asecond p-channel transistor as it crosses the p-diffusion region. Thefirst and second gate electrode features of the second gate electrodetrack are separated by a second end-to-end spacing that is offset fromthe first end-to-end spacing such that a line of sight perpendicular tothe first and second gate electrode tracks does not exist through thefirst and second end-to-end spacings.

In another embodiment, a cell of a semiconductor device is disclosed.The cell includes a substrate portion formed to include a plurality ofdiffusion regions. The plurality of diffusion regions respectivelycorrespond to active areas of the substrate portion within which one ormore processes are applied to modify one or more electricalcharacteristics of the active areas of the substrate portion. Theplurality of diffusion regions are separated from each other by one ormore non-active regions of the substrate portion.

Also in this embodiment, the cell includes a gate electrode level of thecell formed above the substrate portion. The gate electrode levelincludes a number of conductive features defined to extend in only afirst parallel direction. Adjacent ones of the number of conductivefeatures that share a common line of extent in the first paralleldirection are fabricated from respective originating layout featuresthat are separated from each other by an end-to-end spacing having asize measured in the first parallel direction. The size of eachend-to-end spacing between originating layout features corresponding toadjacent ones of the number of conductive features within the gateelectrode level of the cell is substantially equal and is minimized toan extent allowed by a semiconductor device manufacturing capability.The number of conductive features within the gate electrode level of thecell includes conductive features defined along at least four differentvirtual lines of extent in the first parallel direction across the gateelectrode level of the cell.

A width size of the conductive features within the gate electrode levelis measured perpendicular to the first parallel direction. The widthsize of the conductive features within a photolithographic interactionradius within the gate electrode level is less than a wavelength oflight used in a photolithography process to fabricate the conductivefeatures within the gate electrode level. The wavelength of light usedin the photolithography process is less than or equal to 193 nanometers.The photolithographic interaction radius is five wavelengths of lightused in the photolithography process.

Some of the number of conductive features within the gate electrodelevel of the cell are defined to include one or more gate electrodeportions which extend over one or more of the active areas of thesubstrate portion corresponding to the plurality of diffusion regions.Each gate electrode portion and a corresponding active area of thesubstrate portion over which it extends together define a respectivetransistor device.

Also in this embodiment, the cell includes a number of interconnectlevels formed above the gate electrode level of the cell. The substrateportion, the gate electrode level of the cell, and the number ofinterconnect levels are spatially aligned such that structuresfabricated within each of the substrate portion, the gate electrodelevel of the cell, and the number of interconnect levels spatiallyrelate to connect as required to form functional electronic deviceswithin the semiconductor device.

In one embodiment, a semiconductor chip includes a region including aplurality of transistors. Each of the plurality of transistors in theregion forms part of circuitry associated with execution of one or morelogic functions. The region includes at least ten conductive structuresformed within the semiconductor chip. Some of the at least tenconductive structures form at least one transistor gate electrode. Eachof the at least ten conductive structures respectively has acorresponding top surface. An entirety of a periphery of thecorresponding top surface is defined by a corresponding first end, acorresponding second end, a corresponding first edge, and acorresponding second edge, such that a total distance along the entiretyof the periphery of the corresponding top surface is equal to a sum of atotal distance along the corresponding first edge and a total distancealong the corresponding second edge and a total distance along thecorresponding first end and a total distance along the correspondingsecond end. The total distance along the corresponding first edge isgreater than two times the total distance along the corresponding firstend. The total distance along the corresponding first edge is greaterthan two times the total distance along the corresponding second end.The total distance along the corresponding second edge is greater thantwo times the total distance along the corresponding first end. Thetotal distance along the corresponding second edge is greater than twotimes the total distance along the corresponding second end. Thecorresponding first end extends from the corresponding first edge to thecorresponding second edge and is located principally within a spacebetween the corresponding first and second edges. The correspondingsecond end extends from the corresponding first edge to thecorresponding second edge and is located principally within the spacebetween the corresponding first and second edges. The top surfaces ofthe at least ten conductive structures are co-planar with each other.Each of the at least ten conductive structures has a correspondinglengthwise centerline oriented in a first direction along its topsurface and extending from its first end to its second end. Each of theat least ten conductive structures has a length as measured along itslengthwise centerline from its first end to its second end. The firstedge of each of the at least ten conductive structures is substantiallystraight. The second edge of each of the at least ten conductivestructures is substantially straight. Each of the at least tenconductive structures has both its first edge and its second edgeoriented substantially parallel to its lengthwise centerline. Each ofthe at least ten conductive structures has a width measured in a seconddirection perpendicular to the first direction at a midpoint of itslengthwise centerline. Each of the first direction and the seconddirection is oriented substantially parallel to the co-planar topsurfaces of the at least ten conductive structures. The at least tenconductive structures are positioned in a side-by-side manner such thateach of the at least ten conductive structures is positioned to have atleast a portion of its length beside at least a portion of the length ofanother of the at least ten conductive structures. The width of each ofthe at least ten conductive structures is less than 45 nanometers. Theregion has a size of about 965 nanometers as measured in the seconddirection. Each of the at least ten conductive structures is positionedsuch that a distance as measured in the second direction between itslengthwise centerline and the lengthwise centerline of at least oneother of the at least ten conductive structures is substantially equalto a first pitch that is less than or equal to about 193 nanometers. Theregion includes a first transistor of a first transistor type, a secondtransistor of the first transistor type, a first transistor of a secondtransistor type, and a second transistor of the second transistor type.Each transistor of the first transistor type that has its gate electrodeformed by any of the at least ten conductive structures is included in afirst collection of transistors, and each transistor of the secondtransistor type that has its gate electrode formed by any of the atleast ten conductive structures is included in a second collection oftransistors. The first and second collections of transistors areseparated from each other by an inner sub-region of the region, whereinthe inner sub-region does not include a source or a drain of anytransistor. The first transistor of the first transistor type has a gateelectrode formed by a portion of a first conductive structure of the atleast ten conductive structures. Any transistor having its gateelectrode formed by the first conductive structure is of the firsttransistor type. The second transistor of the first transistor type hasa gate electrode formed by a portion of a second conductive structure ofthe at least ten conductive structures. The first transistor of thesecond transistor type has a gate electrode formed by another portion ofthe second conductive structure. The second conductive structure ispositioned such that its lengthwise centerline is separated from thelengthwise centerline of the first conductive structure by the firstpitch as measured in the second direction. The second transistor of thesecond transistor type has a gate electrode formed by one of the atleast ten conductive structures. The conductive structure that forms thegate electrode of the second transistor of the second transistor type ispositioned such that its lengthwise centerline is separated from thelengthwise centerline of the second conductive structure by the firstpitch as measured in the second direction. Any transistor having itsgate electrode formed by the conductive structure that forms the gateelectrode of the second transistor of the second transistor type is ofthe second transistor type. The first conductive structure has a totallength as measured in the first direction that is greater than one-halfof a total length of the second conductive structure as measured in thefirst direction. The second conductive structure has at least one endsubstantially positioned at a first reference line oriented in thesecond direction. And, the conductive structure that forms the gateelectrode of the second transistor of the second transistor type alsohas at least one end substantially positioned at the first referenceline.

Other aspects and advantages of the invention will become more apparentfrom the following detailed description, taken in conjunction with theaccompanying drawings, illustrating by way of example the presentinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an illustration showing a number of neighboring layoutfeatures and a representation of light intensity used to render each ofthe layout features, in accordance with one embodiment of the presentinvention;

FIG. 2 is an illustration showing a generalized stack of layers used todefine a dynamic array architecture, in accordance with one embodimentof the present invention;

FIG. 3A is an illustration showing an exemplary base grid to beprojected onto the dynamic array to facilitate definition of therestricted topology, in accordance with one embodiment of the presentinvention;

FIG. 3B is an illustration showing separate base grids projected acrossseparate regions of the die, in accordance with an exemplary embodimentof the present invention;

FIG. 3C is an illustration showing an exemplary linear-shaped featuredefined to be compatible with the dynamic array, in accordance with oneembodiment of the present invention;

FIG. 3D is an illustration showing another exemplary linear-shapedfeature defined to be compatible with the dynamic array, in accordancewith one embodiment of the present invention;

FIG. 4 is an illustration showing a diffusion layer layout of anexemplary dynamic array, in accordance with one embodiment of thepresent invention;

FIG. 5 is an illustration showing a gate electrode layer and a diffusioncontact layer above and adjacent to the diffusion layer of FIG. 4, inaccordance with one embodiment of the present invention;

FIG. 6 is an illustration showing a gate electrode contact layer definedabove and adjacent to the gate electrode layer of FIG. 5, in accordancewith one embodiment of the present invention;

FIGS. 6A-6E show annotated versions of FIG. 6;

FIG. 7A is an illustration showing a traditional approach for makingcontact to the gate electrode;

FIG. 7B is an illustration showing a gate electrode contact defined inaccordance with one embodiment of the present invention;

FIG. 8A is an illustration showing a metal 1 layer defined above andadjacent to the gate electrode contact layer of FIG. 6, in accordancewith one embodiment of the present invention;

FIG. 8B is an illustration showing the metal 1 layer of FIG. 8A withlarger track widths for the metal 1 ground and power tracks, relative tothe other metal 1 tracks;

FIG. 9 is an illustration showing a via 1 layer defined above andadjacent to the metal 1 layer of FIG. 8A, in accordance with oneembodiment of the present invention;

FIG. 10 is an illustration showing a metal 2 layer defined above andadjacent to the via 1 layer of FIG. 9, in accordance with one embodimentof the present invention;

FIG. 11 is an illustration showing conductor tracks traversing thedynamic array in a first diagonal direction relative to the first andsecond reference directions (x) and (y), in accordance with oneembodiment of the present invention;

FIG. 12 is an illustration showing conductor tracks traversing thedynamic array in a second diagonal direction relative to the first andsecond reference directions (x) and (y), in accordance with oneembodiment of the present invention;

FIG. 13A is an illustration showing an example of a sub-resolutioncontact layout used to lithographically reinforce diffusion contacts andgate electrode contacts, in accordance with one embodiment of thepresent invention;

FIG. 13B is an illustration showing the sub-resolution contact layout ofFIG. 13A with sub-resolution contacts defined to fill the grid to theextent possible, in accordance with one embodiment of the presentinvention;

FIG. 13C is an illustration showing an example of a sub-resolutioncontact layout utilizing various shaped sub-resolution contacts, inaccordance with one embodiment of the present invention;

FIG. 13D is an illustration showing an exemplary implementation ofalternate phase shift masking (APSM) with sub-resolution contacts, inaccordance with one embodiment of the present invention;

FIG. 14 is an illustration showing a semiconductor chip structure, inaccordance with one embodiment of the present invention;

FIG. 14A shows an annotated version of FIG. 14;

FIG. 15 shows an example layout architecture defined in accordance withone embodiment of the present invention; and

FIG. 15A shows an annotated version of FIG. 15.

DETAILED DESCRIPTION

In the following description, numerous specific details are set forth inorder to provide a thorough understanding of the present invention. Itwill be apparent, however, to one skilled in the art that the presentinvention may be practiced without some or all of these specificdetails. In other instances, well known process operations have not beendescribed in detail in order not to unnecessarily obscure the presentinvention.

Generally speaking, a dynamic array architecture is provided to addresssemiconductor manufacturing process variability associated with acontinually increasing lithographic gap. In the area of semiconductormanufacturing, lithographic gap is defined as the difference between theminimum size of a feature to be defined and the wavelength of light usedto render the feature in the lithographic process, wherein the featuresize is less than the wavelength of the light. Current lithographicprocesses utilize a light wavelength of 193 nm. However, current featuresizes are as small as 65 nm and are expected to soon approach sizes assmall as 45 nm. With a size of 65 nm, the shapes are three times smallerthan the wavelength of the light used to define the shapes. Also,considering that the interaction radius of light is about five lightwavelengths, it should be appreciated that shapes exposed with a 193 nmlight source will influence the exposure of shapes approximately 5*193nm ( 965 nm) away. When considering the 65 nm sized features withrespect to 90 nm sized features, it should be appreciated thatapproximately two times as many 65 nm sizes features may be within the965 nm interaction radius of the 193 nm light source as compared to the90 nm sized features.

Due to the increased number of features within the interaction radius ofthe light source, the extent and complexity of light interferencecontributing to exposure of a given feature is significant.Additionally, the particular shapes associated with the features withinthe interaction radius of the light source weighs heavily on the type oflight interactions that occur. Traditionally, designers were allowed todefine essentially any two-dimensional topology of feature shapes solong as a set of design rules were satisfied. For example, in a givenlayer of the chip, i.e., in a given mask, the designer may have definedtwo-dimensionally varying features having bends that wrap around eachother. When such two-dimensionally varying features are located inneighboring proximity to each other, the light used to expose thefeatures will interact in a complex and generally unpredictable manner.The light interaction becomes increasingly more complex andunpredictable as the feature sizes and relative spacing become smaller.

Traditionally, if a designer follows the established set of designrules, the resulting product will be manufacturable with a specifiedprobability associated with the set of design rules. Otherwise, for adesign that violates the set of design rules, the probability ofsuccessful manufacture of the resulting product is unknown. To addressthe complex light interaction between neighboring two-dimensionallyvarying features, in the interest of successful product manufacturing,the set of design rules is expanded significantly to adequately addressthe possible combinations of two-dimensionally varying features. Thisexpanded set of design rules quickly becomes so complicated and unwieldythat application of the expanded set of design rules becomesprohibitively time consuming, expensive, and prone to error. Forexample, the expanded set of design rules requires complex verification.Also, the expanded set of design rules may not be universally applied.Furthermore, manufacturing yield is not guaranteed even if all designrules are satisfied.

It should be appreciated that accurate prediction of all possible lightinteractions when rendering arbitrarily-shaped two-dimensional featuresis generally not feasible. Moreover, as an alternative to or incombination with expansion of the set of design rules, the set of designrules may also be modified to include increased margin to account forunpredictable light interaction between the neighboringtwo-dimensionally varying features. Because the design rules areestablished in an attempt to cover the random two-dimensional featuretopology, the design rules may incorporate a significant amount ofmargin. While addition of margin in the set of design rules assists withthe layout portions that include the neighboring two-dimensionallyvarying features, such global addition of margin causes other portionsof the layout that do not include the neighboring two-dimensionallyvarying features to be overdesigned, thus leading to decreasedoptimization of chip area utilization and electrical performance.

In view of the foregoing, it should be appreciated that semiconductorproduct yield is reduced as a result of parametric failures that stemfrom variability introduced by design-dependent unconstrained featuretopologies, i.e., arbitrary two-dimensionally varying features disposedin proximity to each other. By way of example, these parametric failuresmay result from failure to accurately print contacts and vias and fromvariability in fabrication processes. The variability in fabricationprocesses may include CMP dishing, layout feature shape distortion dueto photolithography, gate distortion, oxide thickness variability,implant variability, and other fabrication related phenomena. Thedynamic array architecture of the present invention is defined toaddress the above-mentioned semiconductor manufacturing processvariability.

FIG. 1 is an illustration showing a number of neighboring layoutfeatures and a representation of light intensity used to render each ofthe layout features, in accordance with one embodiment of the presentinvention. Specifically, three neighboring linear-shaped layout features(101A-101C) are depicted as being disposed in a substantially parallelrelationship within a given mask layer. The distribution of lightintensity from a layout feature shape is represented by a sinc function.The sinc functions (103A-103C) represent the distribution of lightintensity from each of the layout features (101A-101C, respectively).The neighboring linear-shaped layout features (101A-101C) are spacedapart at locations corresponding to peaks of the sinc functions(103A-103C). Thus, constructive interference between the light energyassociated with the neighboring layout features (101A-101C), i.e., atthe peaks of the sinc functions (103A-103C), serves to reinforce theexposure of the neighboring shapes (101A-101C) for the layout featurespacing illustrated. In accordance with the foregoing, the lightinteraction represented in FIG. 1 represents a synchronous case.

As illustrated in FIG. 1, when linear-shaped layout features are definedin a regular repeating pattern at an appropriate spacing, constructiveinterference of the light energy associated with the various layoutfeatures serves to enhance the exposure of each layout feature. Theenhanced exposure of the layout features provided by the constructivelight interference can dramatically reduce or even eliminate a need toutilize optical proximity correction (OPC) and/or reticle enhancementtechnology (RET) to obtain sufficient rendering of the layout features.

A forbidden pitch, i.e., forbidden layout feature spacing, occurs whenthe neighboring layout features (101A-101C) are spaced such that peaksof the sinc function associated with one layout feature align withvalleys of the sinc function associated with another layout feature,thus causing destructive interference of the light energy. Thedestructive interference of the light energy causes the light energyfocused at a given location to be reduced. Therefore, to realize thebeneficial constructive light interference associated with neighboringlayout features, it is necessary to predict the layout feature spacingat which the constructive overlap of the sinc function peaks will occur.Predictable constructive overlap of the sinc function peaks andcorresponding layout feature shape enhancement can be realized if thelayout feature shapes are rectangular, near the same size, and areoriented in the same direction, as illustrated by the layout features(101A-101C) in FIG. 1. In this manner, resonant light energy fromneighboring layout feature shapes is used to enhance the exposure of aparticular layout feature shape.

FIG. 2 is an illustration showing a generalized stack of layers used todefine a dynamic array architecture, in accordance with one embodimentof the present invention. It should be appreciated that the generalizedstack of layers used to define the dynamic array architecture, asdescribed with respect to FIG. 2, is not intended to represent anexhaustive description of the CMOS manufacturing process. However, thedynamic array is to be built in accordance with standard CMOSmanufacturing processes. Generally speaking, the dynamic arrayarchitecture includes both the definition of the underlying structure ofthe dynamic array and the techniques for assembling the dynamic arrayfor optimization of area utilization and manufacturability. Thus, thedynamic array is designed to optimize semiconductor manufacturingcapabilities.

With regard to the definition of the underlying structure of the dynamicarray, the dynamic array is built-up in a layered manner upon a basesubstrate 201, e.g., upon a silicon substrate, or silicon-on-insulator(SOI) substrate. Diffusion regions 203 are defined in the base substrate201. The diffusion regions 203 represent selected regions of the basesubstrate 201 within which impurities are introduced for the purpose ofmodifying the electrical properties of the base substrate 201. Above thediffusion regions 203, diffusion contacts 205 are defined to enableconnection between the diffusion regions 203 and conductor lines. Forexample, the diffusion contacts 205 are defined to enable connectionbetween source and drain diffusion regions 203 and their respectiveconductor nets. Also, gate electrode features 207 are defined above thediffusion regions 203 to form transistor gates. Gate electrode contacts209 are defined to enable connection between the gate electrode features207 and conductor lines. For example, the gate electrode contacts 209are defined to enable connection between transistor gates and theirrespective conductor nets.

Interconnect layers are defined above the diffusion contact 205 layerand the gate electrode contact layer 209. The interconnect layersinclude a first metal (metal 1) layer 211, a first via (via 1) layer213, a second metal (metal 2) layer 215, a second via (via 2) layer 217,a third metal (metal 3) layer 219, a third via (via 3) layer 221, and afourth metal (metal 4) layer 223. The metal and via layers enabledefinition of the desired circuit connectivity. For example, the metaland via layers enable electrical connection of the various diffusioncontacts 205 and gate electrode contacts 209 such that the logicfunction of the circuitry is realized. It should be appreciated that thedynamic array architecture is not limited to a specific number ofinterconnect layers, i.e., metal and via layers. In one embodiment, thedynamic array may include additional interconnect layers 225, beyond thefourth metal (metal 4) layer 223. Alternatively, in another embodiment,the dynamic array may include less than four metal layers.

The dynamic array is defined such that layers (other than the diffusionregion layer 203) are restricted with regard to layout feature shapesthat can be defined therein. Specifically, in each layer other than thediffusion region layer 203, only linear-shaped layout features areallowed. A linear-shaped layout feature in a given layer ischaracterized as having a consistent vertical cross-section shape andextending in a single direction over the substrate. Thus, thelinear-shaped layout features define structures that areone-dimensionally varying. The diffusion regions 203 are not required tobe one-dimensionally varying, although they are allowed to be ifnecessary. Specifically, the diffusion regions 203 within the substratecan be defined to have any two-dimensionally varying shape with respectto a plane coincident with a top surface of the substrate. In oneembodiment, the number of diffusion bend topologies is limited such thatthe interaction between the bend in diffusion and the conductivematerial, e.g., polysilicon, that forms the gate electrode of thetransistor is predictable and can be accurately modeled. Thelinear-shaped layout features in a given layer are positioned to beparallel with respect to each other. Thus, the linear-shaped layoutfeatures in a given layer extend in a common direction over thesubstrate and parallel with the substrate.

The underlying layout methodology of the dynamic array uses constructivelight interference of light waves in the lithographic process toreinforce exposure of neighboring shapes in a given layer. Therefore,the spacing of the parallel, linear-shaped layout features in a givenlayer is designed around the constructive light interference of thestanding light waves such that lithographic correction (e.g., OPC/RET)is minimized or eliminated. Thus, in contrast to conventionalOPC/RET-based lithographic processes, the dynamic array defined hereinexploits the light interaction between neighboring features, rather thanattempting to compensate for the light interaction between neighboringfeatures.

Because the standing light wave for a given linear-shaped layout featurecan be accurately modeled, it is possible to predict how the standinglight waves associated with the neighboring linear-shaped layoutfeatures disposed in parallel in a given layer will interact. Therefore,it is possible to predict how the standing light wave used to expose onelinear-shaped feature will contribute to the exposure of its neighboringlinear-shaped features. Prediction of the light interaction betweenneighboring linear-shaped features enables the identification of anoptimum feature-to-feature spacing such that light used to render agiven shape will reinforce its neighboring shapes. Thefeature-to-feature spacing in a given layer is defined as the featurepitch, wherein the pitch is the center-to-center separation distancebetween adjacent linear-shaped features in a given layer.

To provide the desired exposure reinforcement between neighboringfeatures, the linear-shaped layout features in a given layer are spacedsuch that constructive and destructive interference of the light fromneighboring features will be optimized to produce the best rendering ofall features in the neighborhood. The feature-to-feature spacing in agiven layer is proportional to the wavelength of the light used toexpose the features. The light used to expose each feature within abouta five light wavelength distance from a given feature will serve toenhance the exposure of the given feature to some extent. Theexploitation of constructive interference of the standing light wavesused to expose neighboring features enables the manufacturing equipmentcapability to be maximized and not be limited by concerns regardinglight interactions during the lithography process.

As discussed above, the dynamic array incorporates a restricted topologyin which the features within each layer (other than diffusion) arerequired to be linear-shaped features that are oriented in a parallelmanner to traverse over the substrate in a common direction. With therestricted topology of the dynamic array, the light interaction in thephotolithography process can be optimized such that the printed image onthe mask is essentially identical to the drawn shape in the layout,i.e., essentially a 100 % accurate transfer of the layout onto theresist is achieved.

FIG. 3A is an illustration showing an exemplary base grid to beprojected onto the dynamic array to facilitate definition of therestricted topology, in accordance with one embodiment of the presentinvention. The base grid can be used to facilitate parallel placement ofthe linear-shaped features in each layer of the dynamic array at theappropriate optimized pitch. Although not physically defined as part ofthe dynamic array, the base grid can be considered as a projection oneach layer of the dynamic array. Also, it should be understood that thebase grid is projected in a substantially consistent manner with respectto position on each layer of the dynamic array, thus facilitatingaccurate feature stacking and alignment.

In the exemplary embodiment of FIG. 3A, the base grid is defined as arectangular grid, i.e., Cartesian grid, in accordance with a firstreference direction (x) and a second reference direction (y). Thegridpoint-to-gridpoint spacing in the first and second referencedirections can be defined as necessary to enable definition of thelinear-shaped features at the optimized feature-to-feature spacing.Also, the gridpoint spacing in the first reference direction (x) can bedifferent than the gridpoint spacing in the second reference direction(y). In one embodiment, a single base grid is projected across theentire die to enable location of the various linear-shaped features ineach layer across the entire die. However, in other embodiments,separate base grids can be projected across separate regions of the dieto support different feature-to-feature spacing requirements within theseparate regions of the die. FIG. 3B is an illustration showing separatebase grids projected across separate regions of the die, in accordancewith an exemplary embodiment of the present invention.

The base grid is defined with consideration for the light interactionfunction, i.e., the sinc function, and the manufacturing capability,wherein the manufacturing capability is defined by the manufacturingequipment and processes to be utilized in fabricating the dynamic array.With regard to the light interaction function, the base grid is definedsuch that the spacing between gridpoints enables alignment of peaks inthe sinc functions describing the light energy projected uponneighboring gridpoints. Therefore, linear-shaped features optimized forlithographic reinforcement can be specified by drawing a line from afirst gridpoint to a second gridpoint, wherein the line represents arectangular structure of a given width. It should be appreciated thatthe various linear-shaped features in each layer can be specifiedaccording to their endpoint locations on the base grid and their width.

FIG. 3C is an illustration showing an exemplary linear-shaped feature301 defined to be compatible with the dynamic array, in accordance withone embodiment of the present invention. The linear-shaped feature 301has a substantially rectangular cross-section defined by a width 303 anda height 307. The linear-shaped feature 301 extends in a lineardirection to a length 305. In one embodiment, a cross-section of thelinear-shaped feature, as defined by its width 303 and height 307, issubstantially uniform along its length 305. It should be understood,however, that lithographic effects may cause a rounding of the ends ofthe linear-shaped feature 301. The first and second reference directions(x) and (y), respectively, of FIG. 3A are shown to illustrate anexemplary orientation of the linear-shaped feature on the dynamic array.It should be appreciated that the linear-shaped feature may be orientedto have its length 305 extend in either the first reference direction(x), the second reference direction (y), or in diagonal directiondefined relative to the first and second reference directions (x) and(y). Regardless of the linear-shaped features' particular orientationwith respect to the first and second reference directions (x) and (y),it should be understood that the linear-shaped feature is defined in aplane that is substantially parallel to a top surface of the substrateupon which the dynamic array is built. Also, it should be understoodthat the linear-shaped feature is free of bends, i.e., change indirection, in the plane defined by the first and second referencedirections.

FIG. 3D is an illustration showing another exemplary linear-shapedfeature 317 defined to be compatible with the dynamic array, inaccordance with one embodiment of the present invention. Thelinear-shaped feature 317 has a trapezoidal cross-section defined by alower width 313, an upper width 315, and a height 309. The linear-shapedfeature 317 extends in a linear direction to a length 311. In oneembodiment, the cross-section of the linear-shaped feature 317 issubstantially uniform along its length 311. It should be understood,however, that lithographic effects may cause a rounding of the ends ofthe linear-shaped feature 317. The first and second reference directions(x) and (y), respectively, of FIG. 3A are shown to illustrate anexemplary orientation of the linear-shaped feature on the dynamic array.It should be appreciated that the linear-shaped feature 317 may beoriented to have its length 311 extend in either the first referencedirection (x), the second reference direction (y), or in diagonaldirection defined relative to the first and second reference directions(x) and (y). Regardless of the particular orientation of thelinear-shaped feature 317 with regard to the first and second referencedirections (x) and (y), it should be understood that the linear-shapedfeature 317 is defined in a plane that is substantially parallel to atop surface of the substrate upon which the dynamic array is built.Also, it should be understood that the linear-shaped feature 317 is freeof bends, i.e., change in direction, in the plane defined by the firstand second reference directions.

Although FIGS. 3C and 3D explicitly discuss linear shaped featureshaving rectangular and trapezoidal cross-sections, respectively, itshould be understood that the linear shaped features having other typesof cross-sections can be defined within the dynamic array. Therefore,essentially any suitable cross-sectional shape of the linear-shapedfeature can be utilized so long as the linear-shaped feature is definedto have a length that extends in one direction, and is oriented to haveits length extend in either the first reference direction (x), thesecond reference direction (y), or in diagonal direction definedrelative to the first and second reference directions (x) and (y).

The layout architecture of the dynamic array follows the base gridpattern. Thus, it is possible to use grid points to represent wherechanges in direction occur in diffusion, wherein gate electrode andmetal linear-shaped features are placed, where contacts are placed,where opens are in the linear-shaped gate electrode and metal features,etc. The pitch of the gridpoints, i.e., the gridpoint-to-gridpointspacing, should be set for a given feature line width, e.g., width 303in FIG. 3C, such that exposure of neighboring linear-shaped features ofthe given feature line width will reinforce each other, wherein thelinear-shaped features are centered on gridpoints. With reference to thedynamic array stack of FIG. 2 and the exemplary base grid of FIG. 3A, inone embodiment, the gridpoint spacing in the first reference direction(x) is set by the required gate electrode gate pitch. In this sameembodiment, the gridpoint pitch in the second reference direction (y) isset by the metal 1 and metal 3 pitch. For example, in a 90 nm processtechnology, i.e., minimum feature size equal to 90 nm, the gridpointpitch in the second reference direction (y) is about 0.24 micron. In oneembodiment, metal 1 and metal 2 layers will have a common spacing andpitch. A different spacing and pitch may be used above the metal 2layer.

The various layers of the dynamic array are defined such that thelinear-shaped features in adjacent layers extend in a crosswise mannerwith respect to each other. For example, the linear-shaped features ofadjacent layers may extend orthogonally, i.e., perpendicularly withrespect to each other. Also, the linear-shaped features of one layer mayextend across the linear-shaped features of an adjacent layer at anangle, e.g., at about 45 degrees. For example, in one embodiment thelinear-shaped feature of one layer extend in the first referencedirection (x) and the linear-shaped features of the adjacent layerextend diagonally with respect to the first (x) and second (y) referencedirections. It should be appreciated that to route a design in thedynamic array having the linear-shaped features positioned in thecrosswise manner in adjacent layers, opens can be defined in thelinear-shaped features, and contacts and vias can be defined asnecessary.

The dynamic array minimizes the use of bends in layout shapes toeliminate unpredictable lithographic interactions. Specifically, priorto OPC or other RET processing, the dynamic array allows bends in thediffusion layer to enable control of device sizes, but does not allowbends in layers above the diffusion layer. The layout features in eachlayer above the diffusion layer are linear in shape, e.g., FIG. 3C, anddisposed in a parallel relationship with respect to each other. Thelinear shapes and parallel positioning of layout features areimplemented in each stack layer of the dynamic array wherepredictability of constructive light interference is necessary to ensuremanufacturability. In one embodiment, the linear shapes and parallelpositioning of layout features are implemented in the dynamic array ineach layer above diffusion through metal 2. Above metal 2, the layoutfeatures may be of sufficient size and shape that constructive lightinterference is not required to ensure manufacturability. However, thepresence of constructive light interference in patterning layoutfeatures above metal 2 may be beneficial.

An exemplary buildup of dynamic array layers from diffusion throughmetal 2 are described with respect to FIGS. 4 through 14. It should beappreciated that the dynamic array described with respect to FIGS. 4through 14 is provided by way of example only, and is not intended toconvey limitations of the dynamic array architecture. The dynamic arraycan be used in accordance with the principles presented herein to defineessentially any integrated circuit design.

FIG. 4 is an illustration showing a diffusion layer layout of anexemplary dynamic array, in accordance with one embodiment of thepresent invention. The diffusion layer of FIG. 4 shows a p-diffusionregion 401 and an n-diffusion region 403. While the diffusion regionsare defined according to the underlying base grid, the diffusion regionsare not subject to the linear-shaped feature restrictions associatedwith the layers above the diffusion layer. The diffusion regions 401 and403 include diffusion squares 405 defined where diffusion contacts willbe located. The diffusion regions 401 and 403 do not include extraneousjogs or corners, thus improving the use of lithographic resolution andenabling more accurate device extraction. Additionally, n+ mask regions(412 and 416) and p+ mask regions (410 and 414) are defined asrectangles on the (x), (y) grid with no extraneous jogs or notches. Thisstyle permits use of larger diffusion regions, eliminates need forOPC/RET, and enables use of lower resolution and lower cost lithographicsystems, e.g., i-line illumination at 365 nm. It should be appreciatedthat the n+ mask region 416 and the p+ mask region 410, as depicted inFIG. 4, are for an embodiment that does not employ well-biasing. In analternative embodiment where well-biasing is to be used, the n+ maskregion 416 shown in FIG. 4 will actually be defined as a p+ mask region.Also, in this alternative embodiment, the p+ mask region 410 shown inFIG. 4 will actually be defined as a n+ mask region.

FIG. 5 is an illustration showing a gate electrode layer and a diffusioncontact layer above and adjacent to the diffusion layer of FIG. 4, inaccordance with one embodiment of the present invention. As thoseskilled in the CMOS arts will appreciate, the gate electrode features501 define the transistor gates. The gate electrode features 501 aredefined as linear shaped features extending in a parallel relationshipacross the dynamic array in the second reference direction (y). In oneembodiment, the gate electrode features 501 are defined to have a commonwidth. However, in another embodiment, one or more of the gate electrodefeatures can be defined to have a different width. For example, FIG. 5shows a gate electrode features 501A that has a larger width relative tothe other gate electrode features 501. The pitch (center-to-centerspacing) of the gate electrode features 501 is minimized while ensuringoptimization of lithographic reinforcement, i.e., resonant imaging,provided by neighboring gate electrode features 501. For discussionpurposes, gate electrode features 501 extending across the dynamic arrayin a given line are referred to as a gate electrode track.

The gate electrode features 501 form n-channel and p-channel transistorsas they cross the diffusion regions 403 and 401, respectively. Optimalgate electrode feature 501 printing is achieved by drawing gateelectrode features 501 at every grid location, even though no diffusionregion may be present at some grid locations. Also, long continuous gateelectrode features 501 tend to improve line end shortening effects atthe ends of gate electrode features within the interior of the dynamicarray. Additionally, gate electrode printing is significantly improvedwhen all bends are removed from the gate electrode features 501.

Each of the gate electrode tracks may be interrupted, i.e., broken, anynumber of times in linearly traversing across the dynamic array in orderto provide required electrical connectivity for a particular logicfunction to be implemented. When a given gate electrode track isrequired to be interrupted, the separation between ends of the gateelectrode track segments at the point of interruption is minimized tothe extent possible taking into consideration the manufacturingcapability and electrical effects. In one embodiment, optimalmanufacturability is achieved when a common end-to-end spacing is usedbetween features within a particular layer.

Minimizing the separation between ends of the gate electrode tracksegments at the points of interruption serves to maximize thelithographic reinforcement, and uniformity thereof, provided fromneighboring gate electrode tracks. Also, in one embodiment, if adjacentgate electrode tracks need to be interrupted, the interruptions of theadjacent gate electrode tracks are made such that the respective pointsof interruption are offset from each other so as to avoid, to the extentpossible, an occurrence of neighboring points of interruption. Morespecifically, points of interruption within adjacent gate electrodetracks are respectively positioned such that a line of sight does notexist through the points of interruption, wherein the line of sight isconsidered to extend perpendicularly to the direction in which the gateelectrode tracks extend over the substrate. Additionally, in oneembodiment, the gate electrodes may extend through the boundaries at thetop and bottom of the cells, i.e., the PMOS or NMOS cells. Thisembodiment would enable bridging of neighboring cells.

With further regard to FIG. 5, diffusion contacts 503 are defined ateach diffusion square 405 to enhance the printing of diffusion contactsvia resonant imaging. The diffusion squares 405 are present around everydiffusion contact 503 to enhance the printing of the power and groundconnection polygons at the diffusion contacts 503.

The gate electrode features 501 and diffusion contacts 503 share acommon grid spacing. More specifically, the gate electrode feature 501placement is offset by one-half the grid spacing relative to thediffusion contacts 503. For example, if the gate electrode features 501and diffusion contact 503 grid spacing is 0.36 μm, then the diffusioncontacts are placed such that the x-coordinate of their center falls onan integer multiple of 0.36 μm, while the x-coordinate of the center ofeach gate electrode feature 501 minus 0.18 μm should be an integermultiple of 0.36 μm. In the present example, the x-coordinates arerepresented by the following:

Diffusion contact center x-coordinate=I * 0.36 μm, where I is the gridnumber;

Gate electrode feature center x-coordinate=0.18 μm+I * 0.36 μm, where Iis the grid number.

The grid based system of the dynamic array ensures that all contacts(diffusion and gate electrode) will land on a horizontal grid that isequal to a multiple of one-half of the diffusion contact grid and avertical grid that is set by the metal 1 pitch. In the example above,the gate electrode feature and diffusion contact grid is 0.36 μm. Thediffusion contacts and gate electrode contacts will land on a horizontalgrid that is a multiple of 0.18 μm. Also, the vertical grid for 90 nmprocess technologies is about 0.24 μm.

FIG. 6 is an illustration showing a gate electrode contact layer definedabove and adjacent to the gate electrode layer of FIG. 5, in accordancewith one embodiment of the present invention. In the gate electrodecontact layer, gate electrode contacts 601 are drawn to enableconnection of the gate electrode features 501 to the overlying metalconduction lines. In general, design rules will dictate the optimumplacement of the gate electrode contacts 601. In one embodiment, thegate electrode contacts are drawn on top of the transistor endcapregions. This embodiment minimizes white space in the dynamic array whendesign rules specify long transistor endcaps. In some processtechnologies white space may be minimized by placing a number of gateelectrode contacts for a cell in the center of the cell. Also, it shouldbe appreciated that in the present invention, the gate electrode contact601 is oversized in the direction perpendicular to the gate electrodefeature 501 to ensure overlap between the gate electrode contact 601 andthe gate electrode feature 501.

FIG. 6A shows an annotated version of FIG. 6. The features depicted inFIG. 6A are exactly the same as the features depicted in FIG. 6. FIG. 6Ashows a first conductive gate level structure 501 a having a lengthwisecenterline 6 a 01. FIG. 6A shows a second conductive gate levelstructure 501 b and a third conductive gate level structure 501 c havinga lengthwise centerline 6 a 03. FIG. 6A shows a fourth conductive gatelevel structure 501 d and a fifth conductive gate level structure 501 ehaving the lengthwise centerline 6 a 05. FIG. 6A shows a sixthconductive gate level structure 501 f having a lengthwise centerline 6 a07. FIG. 6A shows a seventh conductive gate level structure 501 g havinga lengthwise centerline 6 a 09. FIG. 6A shows an eighth conductive gatelevel structure 501 h having a lengthwise centerline 6 a 11.

FIG. 6A shows the first conductive gate level structure 501 a separatedfrom each of the second conductive gate level structure 501 b and thirdconductive gate level structure 501 c by a centerline-to-centerlinespacing 6 a 13 as measured in a direction perpendicular to the paralleldirection of the gate level structures. FIG. 6A shows the secondconductive gate level structure 501 b separated from the fourthconductive gate level structure 501 d by a centerline-to-centerlinespacing 6 a 15 as measured in the direction perpendicular to theparallel direction of the gate level structures. FIG. 6A shows the thirdconductive gate level structure 501 c separated from the fifthconductive gate level structure 501 e by a centerline-to-centerlinespacing 6 a 15 as measured in the direction perpendicular to theparallel direction of the gate level structures. FIG. 6A shows the sixthconductive gate level structure 501 f separated from each of the fourthconductive gate level structure 501 d and fifth conductive gate levelstructure 501 e by a centerline-to-centerline spacing 6 a 17 as measuredin the direction perpendicular to the parallel direction of the gatelevel structures. FIG. 6A shows the sixth conductive gate levelstructure 501 f separated from the seventh conductive gate levelstructure 501 g by a centerline-to-centerline spacing 6 a 19 as measuredin the direction perpendicular to the parallel direction of the gatelevel structures. FIG. 6A shows the seventh conductive gate levelstructure 501 g separated from the eighth conductive gate levelstructure 501 h by a centerline-to-centerline spacing 6 a 21 as measuredin the direction perpendicular to the parallel direction of the gatelevel structures.

FIG. 6A shows the first conductive gate level structure 501 a forming agate electrode of a transistor 6 a 47 of a first transistor type and agate electrode of a transistor 6 a 37 of a second transistor type. FIG.6A shows the second conductive gate level structure 501 b forming a gateelectrode of a transistor 6 a 49 of the first transistor type. FIG. 6Ashows the third conductive gate level structure 501 c forming a gateelectrode of a transistor 6 a 39 of the second transistor type. FIG. 6Ashows the fourth conductive gate level structure 501 d forming a gateelectrode of a transistor 6 a 51 of the first transistor type. FIG. 6Ashows the fifth conductive gate level structure 501 e forming a gateelectrode of a transistor 6 a 41 of the second transistor type. FIG. 6Ashows the sixth conductive gate level structure 501 f forming a gateelectrode of a transistor 6 a 53 of the first transistor type and a gateelectrode of a transistor 6 a 43 of the second transistor type. FIG. 6Ashows the seventh conductive gate level structure 501 g not forming agate electrode of a transistor. FIG. 6A shows the eighth conductive gatelevel structure 501 h forming a gate electrode of a transistor 6 a 55 ofthe first transistor type and a gate electrode of a transistor 6 a 45 ofthe second transistor type.

FIG. 6A shows the contact 601 a connected to the first conductive gatelevel structure 501 a. FIG. 6A shows the contact 601 b connected to thesecond conductive gate level structure 501 b. FIG. 6A shows the contact601 c connected to the third conductive gate level structure 501 c. FIG.6A shows the contact 601 d connected to the fourth conductive gate levelstructure 501 d. FIG. 6A shows the contact 601 e connected to the fifthconductive gate level structure 501 e. FIG. 6A shows the contact 601 fconnected to the sixth conductive gate level structure 501 f.

FIG. 6A shows the contact 601 b positioned to contact the secondconductive gate level structure 501 b at a contact-to-gate distance 6 a25 from a gate electrode of the transistor 6 a 49. FIG. 6A shows thecontact 601 c positioned to contact the third conductive gate levelstructure 501 c at a contact-to-gate distance 6 a 27 from a gateelectrode of the transistor 6 a 39. FIG. 6A shows the contact 601 dpositioned to contact the fourth conductive gate level structure 501 dat a contact-to-gate distance 6 a 23 from a gate electrode of thetransistor 6 a 51. FIG. 6A shows the contact 601 e positioned to contactthe fifth conductive gate level structure 501 e at a contact-to-gatedistance 6 a 29 from a gate electrode of the transistor 6 a 41.

FIG. 6B shows an annotated version of FIG. 6. The features depicted inFIG. 6B are exactly the same as the features depicted in FIG. 6. FIG. 6Bshows the contact 601 b located at a contact position 6 a 31 in theparallel direction of the conductive gate level structures, i.e., in they direction. FIG. 6B shows the contact 601 c and the contact 601 dlocated at a contact position 6 a 33 in the parallel direction of theconductive gate level structures. FIG. 6B shows the contact 601 elocated at a contact position 6 a 35 in the parallel direction of theconductive gate level structures. FIG. 6B shows the contacts 601 b and601 e positioned outside the diffusion regions 401 and 403 of differentdiffusion region types. FIG. 6B shows the contacts 601 c and 601 dpositioned between the diffusion regions 401 and 403 of differentdiffusion region types, i.e., positioned over the inner non-diffusionregion between the diffusion regions 401 and 403 of different diffusionregion types.

FIG. 6C shows an annotated version of FIG. 6. The features depicted inFIG. 6C are exactly the same as the features depicted in FIG. 6. FIG. 6Cshows the second conductive gate level structure 501 b extending adistance 6 a 57 beyond the contact 601 b in the parallel direction(y-direction) away from the gate electrode of the transistor 6 a 49.FIG. 6C shows the third conductive gate level structure 501 c extendinga distance 6 a 59 beyond the contact 601 c in the parallel direction(y-direction) away from the gate electrode of the transistor 6 a 39.FIG. 6C shows the fourth conductive gate level structure 501 d extendinga distance 6 a 61 beyond the contact 601 d in the parallel direction(y-direction) away from the gate electrode of the transistor 6 a 51.FIG. 6C shows the fifth conductive gate level structure 501 e extendinga distance 6 a 63 beyond the contact 601 e in the parallel direction(y-direction) away from the gate electrode of the transistor 6 a 41.

FIG. 6D shows an annotated version of FIG. 6. The features depicted inFIG. 6D are exactly the same as the features depicted in FIG. 6. FIG. 6Dshows the first conductive gate level structure 501 a defined to have alength 6 a 89 as measured in the parallel direction (y-direction). FIG.6D shows the second conductive gate level structure 501 b defined tohave a length 6 a 93 as measured in the parallel direction(y-direction). FIG. 6D shows the third conductive gate level structure501 c defined to have a length 6 a 91 as measured in the paralleldirection (y-direction). FIG. 6D shows the fourth conductive gate levelstructure 501 d defined to have a length 6 a 97 as measured in theparallel direction (y-direction). FIG. 6D shows the fifth conductivegate level structure 501 e defined to have a length 6 a 95 as measuredin the parallel direction (y-direction). FIG. 6D shows the sixthconductive gate level structure 501 f defined to have a length 6 a 99 asmeasured in the parallel direction (y-direction). FIG. 6D shows theseventh conductive gate level structure 501 g defined to have a length 6a 101 as measured in the parallel direction (y-direction). FIG. 6D showsthe eighth conductive gate level structure 501 h defined to have alength 6 a 103 as measured in the parallel direction (y-direction).

FIG. 6D shows the second conductive gate level structure 501 bpositioned in a spaced apart end-to-end manner with the third conductivegate level structure 501 c. FIG. 6D shows the second conductive gatelevel structure 501 b separated from the third conductive gate levelstructure 501 c by a first end-to-end spacing 6 a 85 as measured in theparallel direction (y-direction). FIG. 6D shows the fourth conductivegate level structure 501 d positioned in a spaced apart end-to-endmanner with the fifth conductive gate level structure 501 e. FIG. 6Dshows the fourth conductive gate level structure 501 d separated fromthe fifth conductive gate level structure 501 e by a second end-to-endspacing 6 a 87 as measured in the parallel direction (y-direction). FIG.6D shows the first end-to-end spacing 6 a 85 positioned over the innernon-diffusion region between the two diffusion regions 401 and 403 ofdifferent diffusion types. FIG. 6D shows the second end-to-end spacing 6a 87 positioned over the inner non-diffusion region between the twodiffusion regions 401 and 403 of different diffusion types. FIG. 6Dshows the first end-to-end spacing 6 a 85 offset in the paralleldirection (y-direction) from the second end-to-end spacing 6 a 87.

FIG. 6D shows the first, second, fourth, sixth, seventh, and eighthconductive gate level structures 501 a, 501 b, 501 d, 501 f, 501 g, 501h, respectively, each having an end aligned with a first common position6 a 81 in the parallel direction (y-direction). FIG. 6D shows the first,third, fifth, sixth, seventh, and eighth conductive gate levelstructures 501 a, 501 c, 501 e, 501 f, 501 g, 501 h, respectively, eachhaving an end aligned with a second common position 6 a 83 in theparallel direction (y-direction).

FIG. 6E shows an annotated version of FIG. 6. The features depicted inFIG. 6E are exactly the same as the features depicted in FIG. 6. FIG. 6Eshows the second conductive gate level feature 501 b having an outerextension distance 6 a 105 as measured in the parallel direction(y-direction) away from the gate electrode of the transistor 6 a 49 andaway from the transistor 6 a 39. FIG. 6E shows the second conductivegate level feature 501 b having an inner extension distance 6 a 107 asmeasured in the parallel direction (y-direction) away from the gateelectrode of the transistor 6 a 49 and toward the transistor 6 a 39.FIG. 6E shows the third conductive gate level feature 501 c having anouter extension distance 6 a 111 as measured in the parallel direction(y-direction) away from the gate electrode of the transistor 6 a 39 andaway from the transistor 6 a 49. FIG. 6E shows the third conductive gatelevel feature 501 c having an inner extension distance 6 a 109 asmeasured in the parallel direction (y-direction) away from the gateelectrode of the transistor 6 a 39 and toward the transistor 6 a 49.

FIG. 6E shows the fourth conductive gate level feature 501 d having anouter extension distance 6 a 113 as measured in the parallel direction(y-direction) away from the gate electrode of the transistor 6 a 51 andaway from the transistor 6 a 41. FIG. 6E shows the fourth conductivegate level feature 501 d having an inner extension distance 6 a 115 asmeasured in the parallel direction (y-direction) away from the gateelectrode of the transistor 6 a 51 and toward the transistor 6 a 41.FIG. 6E shows the fifth conductive gate level feature 501 e having anouter extension distance 6 a 119 as measured in the parallel direction(y-direction) away from the gate electrode of the transistor 6 a 41 andaway from the transistor 6 a 51. FIG. 6E shows the fifth conductive gatelevel feature 501 e having an inner extension distance 6 a 117 asmeasured in the parallel direction (y-direction) away from the gateelectrode of the transistor 6 a 41 and toward the transistor 6 a 51.FIG. 7A is an illustration showing a traditional approach for makingcontact to a gate electrode, e.g., polysilicon feature. In thetraditional configuration of FIG. 7A, an enlarged rectangular gateelectrode region 707 is defined where a gate electrode contact 709 is tobe located. The enlarged rectangular gate electrode region 707introduces a bend of distance 705 in the gate electrode. The bendassociated with the enlarged rectangular gate electrode region 707 setsup undesirable light interactions and distorts the gate electrode line711. Distortion of the gate electrode line 711 is especially problematicwhen the gate electrode width is about the same as a transistor length.

FIG. 7B is an illustration showing a gate electrode contact 601, e.g.,polysilicon contact, defined in accordance with one embodiment of thepresent invention. The gate electrode contact 601 is drawn to overlapthe edges of the gate electrode feature 501, and extend in a directionsubstantially perpendicular to the gate electrode feature 501. In oneembodiment, the gate electrode contact 601 is drawn such that thevertical dimension 703 is same as the vertical dimension used for thediffusion contacts 503. For example, if the diffusion contact 503opening is specified to be 0.12 μm square then the vertical dimension ofthe gate electrode contact 601 is drawn at 0.12 μm. However, in otherembodiments, the gate electrode contact 601 can be drawn such that thevertical dimension 703 is different from the vertical dimension used forthe diffusion contacts 503.

In one embodiment, the gate electrode contact 601 extension 701 beyondthe gate electrode feature 501 is set such that maximum overlap isachieved between the gate electrode contact 601 and the gate electrodefeature 501. The extension 701 is defined to accommodate line endshortening of the gate electrode contact 601, and misalignment betweenthe gate electrode contact layer and gate electrode feature layer. Thelength of the gate electrode contact 601 is defined to ensure maximumsurface area contact between the gate electrode contact 601 and the gateelectrode feature 501, wherein the maximum surface area contact isdefined by the width of the gate electrode feature 501.

FIG. 8A is an illustration showing a metal 1 layer defined above thegate electrode contact layer of FIG. 6, in accordance with oneembodiment of the present invention. The metal 1 layer includes a numberof metal 1 tracks 801-821 defined to include linear shaped featuresextending in a parallel relationship across the dynamic array. The metal1 tracks 801-821 extend in a direction substantially perpendicular tothe gate electrode features 501 in the underlying gate electrode layerof FIG. 5. Thus, in the present example, the metal 1 tracks 801-821extend linearly across the dynamic array in the first referencedirection (x). The pitch (center-to-center spacing) of the metal 1tracks 801-821 is minimized while ensuring optimization of lithographicreinforcement, i.e., resonant imaging, provided by neighboring metal 1tracks 801-821. For example, in one embodiment, the metal 1 tracks801-821 are centered on a vertical grid of about 0.24 μm for a 90 nmprocess technology.

Each of the metal 1 tracks 801-821 may be interrupted, i.e., broken, anynumber of times in linearly traversing across the dynamic array in orderto provide required electrical connectivity for a particular logicfunction to be implemented. When a given metal 1 track 801-821 isrequired to be interrupted, the separation between ends of the metal 1track segments at the point of interruption is minimized to the extentpossible taking into consideration manufacturing capability andelectrical effects. Minimizing the separation between ends of the metal1 track segments at the points of interruption serves to maximize thelithographic reinforcement, and uniformity thereof, provided fromneighboring metal 1 tracks. Also, in one embodiment, if adjacent metal 1tracks need to be interrupted, the interruptions of the adjacent metal 1tracks are made such that the respective points of interruption areoffset from each other so as to avoid, to the extent possible, anoccurrence of neighboring points of interruption. More specifically,points of interruption within adjacent metal 1 tracks are respectivelypositioned such that a line of sight does not exist through the pointsof interruption, wherein the line of sight is considered to extendperpendicularly to the direction in which the metal 1 tracks extend overthe substrate.

In the example of FIG. 8A, the metal 1 track 801 is connected to theground supply, and the metal 1 track 821 is connected to the powersupply voltage. In the embodiment of FIG. 8A, the widths of the metal 1tracks 801 and 821 are the same as the other metal 1 tracks 803-819.However, in another embodiment, the widths of metal 1 tracks 801 and 821are larger than the widths of the other metal 1 tracks 803-819. FIG. 8Bis an illustration showing the metal 1 layer of FIG. 8A with largertrack widths for the metal 1 ground and power tracks (801A and 821A),relative to the other metal 1 tracks 803-819.

The metal 1 track pattern is optimally configured to optimize the use of“white space” (space not occupied by transistors). The example of FIG.8A includes the two shared metal 1 power tracks 801 and 821, and ninemetal 1 signal tracks 803-819. Metal 1 tracks 803, 809, 811, and 819 aredefined as gate electrode contact tracks in order to minimize whitespace. Metal 1 tracks 805 and 807 are defined to connect to n-channeltransistor source and drains. Metal 1 tracks 813, 815, and 817 aredefined to connect to p-channel source and drains. Also, any of the ninemetal 1 signal tracks 803-819 can be used as a feed through if noconnection is required. For example, metal 1 tracks 813 and 815 areconfigured as feed through connections.

FIG. 9 is an illustration showing a via 1 layer defined above andadjacent to the metal 1 layer of FIG. 8A, in accordance with oneembodiment of the present invention. Vias 901 are defined in the via 1layer to enable connection of the metal 1 tracks 801-821 to higher levelconduction lines.

FIG. 10 is an illustration showing a metal 2 layer defined above andadjacent to the via 1 layer of FIG. 9, in accordance with one embodimentof the present invention. The metal 2 layer includes a number of metal 2tracks 1001 defined as linear shaped features extending in a parallelrelationship across the dynamic array. The metal 2 tracks 1001 extend ina direction substantially perpendicular to the metal 1 tracks 801-821 inthe underlying metal 1 layer of FIG. 8A, and in a directionsubstantially parallel to the gate electrode tracks 501 in theunderlying gate electrode layer of FIG. 5. Thus, in the present example,the metal 2 tracks 1001 extend linearly across the dynamic array in thesecond reference direction (y).

The pitch (center-to-center spacing) of the metal 2 tracks 1001 isminimized while ensuring optimization of lithographic reinforcement,i.e., resonant imaging, provided by neighboring metal 2 tracks. Itshould be appreciated that regularity can be maintained on higher levelinterconnect layers in the same manner as implemented in the gateelectrode and metal 1 layers. In one embodiment, the gate electrodefeature 501 pitch and the metal 2 track pitch is the same. In anotherembodiment, the contacted gate electrode pitch (e.g.,polysilicon-to-polysilicon space with a diffusion contact in between) isgreater than the metal 2 track pitch. In this embodiment, the metal 2track pitch is optimally set to be ⅔ or ¾ of the contacted gateelectrode pitch. Thus, in this embodiment, the gate electrode track andmetal 2 track align at every two gate electrode track pitches and everythree metal 2 track pitches. For example, in a 90 nm process technology,the optimum contacted gate electrode track pitch is 0.36 μm, and theoptimum metal 2 track pitch is 0.24 μm. In another embodiment, the gateelectrode track and the metal 2 track align at every three gateelectrode pitches and every four metal 2 pitches. For example, in a 90nm process technology, the optimum contacted gate electrode track pitchis 0.36 μm, and the optimum metal 2 track pitch is 0.27 μm.

Each of the metal 2 tracks 1001 may be interrupted, i.e., broken, anynumber of times in linearly traversing across the dynamic array in orderto provide required electrical connectivity for a particular logicfunction to be implemented. When a given metal 2 track 1001 is requiredto be interrupted, the separation between ends of the metal 2 tracksegments at the point of interruption is minimized to the extentpossible taking into consideration manufacturing and electrical effects.Minimizing the separation between ends of the metal 2 track segments atthe points of interruption serves to maximize the lithographicreinforcement, and uniformity thereof, provided from neighboring metal 2tracks. Also, in one embodiment, if adjacent metal 2 tracks need to beinterrupted, the interruptions of the adjacent metal 2 tracks are madesuch that the respective points of interruption are offset from eachother so as to avoid, to the extent possible, an occurrence ofneighboring points of interruption. More specifically, points ofinterruption within adjacent metal 2 tracks are respectively positionedsuch that a line of sight does not exist through the points ofinterruption, wherein the line of sight is considered to extendperpendicularly to the direction in which the metal 2 tracks extend overthe substrate.

As discussed above, the conduction lines in a given metal layer abovethe gate electrode layer may traverse the dynamic array in a directioncoincident with either the first reference direction (x) or the secondreference direction (y). It should be further appreciated that theconduction lines in a given metal layer above the gate electrode layermay traverse the dynamic array in a diagonal direction relative to thefirst and second reference directions (x) and (y). FIG. 11 is anillustration showing conductor tracks 1101 traversing the dynamic arrayin a first diagonal direction relative to the first and second referencedirections (x) and (y), in accordance with one embodiment of the presentinvention. FIG. 12 is an illustration showing conductor tracks 1201traversing the dynamic array in a second diagonal direction relative tothe first and second reference directions (x) and (y), in accordancewith one embodiment of the present invention.

As with the metal 1 and metal 2 tracks discussed above, the diagonaltraversing conductor tracks 1101 and 1201 of FIGS. 11 and 12 may beinterrupted, i.e., broken, any number of times in linearly traversingacross the dynamic array in order to provide required electricalconnectivity for a particular logic function to be implemented. When agiven diagonal traversing conductor track is required to be interrupted,the separation between ends of the diagonal conductor track at the pointof interruption is minimized to the extent possible taking intoconsideration manufacturing and electrical effects. Minimizing theseparation between ends of the diagonal conductor track at the points ofinterruption serves to maximize the lithographic reinforcement, anduniformity thereof, provided from neighboring diagonal conductor tracks.

An optimal layout density within the dynamic array is achieved byimplementing the following design rules:

at least two metal 1 tracks be provided across the n-channel devicearea;

at least two metal 1 tracks be provided across the p-channel devicearea;

at least two gate electrode tracks be provided for the n-channel device;and

at least two gate electrode tracks be provided for the p-channel device.

Contacts and vias are becoming the most difficult mask from alithographic point of view. This is because the contacts and vias aregetting smaller, more closely spaced, and are randomly distributed. Thespacing and density of the cuts (contact or vias) makes it extremelydifficult to reliably print the shapes. For example, cut shapes may beprinted improperly due to destructive interference patterns fromneighboring shapes or lack of energy on lone shapes. If a cut isproperly printed, the manufacturing yield of the associated contact orvia is extremely high. Sub-resolution contacts can be provided toreinforce the exposure of the actual contacts, so long as thesub-resolution contacts do not resolve. Also, the sub-resolutioncontacts can be of any shape so long as they are smaller than theresolution capability of the lithographic process.

FIG. 13A is an illustration showing an example of a sub-resolutioncontact layout used to lithographically reinforce diffusion contacts andgate electrode contacts, in accordance with one embodiment of thepresent invention. Sub-resolution contacts 1301 are drawn such that theyare below the resolution of the lithographic system and will not beprinted. The function of the sub-resolution contacts 1301 is to increasethe light energy at the desired contact locations, e.g., 503, 601,through resonant imaging. In one embodiment, sub-resolution contacts1301 are placed on a grid such that both gate electrode contacts 601 anddiffusion contacts 503 are lithographically reinforced. For example,sub-resolution contacts 1301 are placed on a grid that is equal toone-half the diffusion contact 503 grid spacing to positively impactboth gate electrode contacts 601 and diffusion contacts 503. In oneembodiment, a vertical spacing of the sub-resolution contacts 1301follows the vertical spacing of the gate electrode contacts 601 anddiffusion contacts 503.

Grid location 1303 in FIG. 13A denotes a location between adjacent gateelectrode contacts 601. Depending upon the lithographic parameters inthe manufacturing process, it is possible that a sub-resolution contact1301 at this grid location would create an undesirable bridge betweenthe two adjacent gate electrode contacts 601. If bridging is likely tooccur, a sub-resolution resolution contact 1301 at location 1303 can beomitted. Although FIG. 13A shows an embodiment where sub-resolutioncontacts are placed adjacent to actual features to be resolved and notelsewhere, it should be understood that another embodiment may place asub-resolution contact at each available grid location so as to fill thegrid.

FIG. 13B is an illustration showing the sub-resolution contact layout ofFIG. 13A with sub-resolution contacts defined to fill the grid to theextent possible, in accordance with one embodiment of the presentinvention. It should be appreciated that while the embodiment of FIG.13B fills the grid to the extent possible with sub-resolution contacts,placement of sub-resolution contacts is avoided at locations that wouldpotentially cause undesirable bridging between adjacent fully resolvedfeatures.

FIG. 13C is an illustration showing an example of a sub-resolutioncontact layout utilizing various shaped sub-resolution contacts, inaccordance with one embodiment of the present invention. Alternativesub-resolution contact shapes can be utilized so long as thesub-resolution contacts are below the resolution capability of themanufacturing process. FIG. 13C shows the use of “X-shaped”sub-resolution contacts 1305 to focus light energy at the corners of theadjacent contacts. In one embodiment, the ends of the X-shapedsub-resolution contact 1305 are extended to further enhance thedeposition of light energy at the corners of the adjacent contacts.

FIG. 13D is an illustration showing an exemplary implementation ofalternate phase shift masking (APSM) with sub-resolution contacts, inaccordance with one embodiment of the present invention. As in FIG. 13A,sub-resolution contacts are utilized to lithographically reinforcediffusion contacts 503 and gate electrode contacts 601. APSM is used toimprove resolution when neighboring shapes create destructiveinterference patterns. The APSM technique modifies the mask so that thephase of light traveling through the mask on neighboring shapes is 180degrees out of phase. This phase shift serves to remove destructiveinterference and allowing for greater contact density. By way ofexample, contacts in FIG. 13D marked with a plus “+” sign representcontacts exposed with light waves of a first phase while contacts markedwith a minus sign “−” represent contacts exposed with light waves thatare shifted in phase by 180 degrees relative to the first phase used forthe “+” sign contacts. It should be appreciated that the APSM techniqueis utilized to ensure that adjacent contacts are separated from eachother.

As feature sizes decrease, semiconductor dies are capable of includingmore gates. As more gates are included, however, the density of theinterconnect layers begins to dictate the die size. This increasingdemand on the interconnect layers drives higher levels of interconnectlayers. However, the stacking of interconnect layers is limited in partby the topology of the underlying layers. For example, as interconnectlayers are built up, islands, ridges, and troughs can occur. Theseislands, ridges, and troughs can cause breaks in the interconnect linesthat cross them.

To mitigate these islands and troughs, the semiconductor manufacturingprocess utilizes a chemical mechanical polishing (CMP) procedure tomechanically and chemically polish the surface of the semiconductorwafer such that each subsequent interconnect layer is deposited on asubstantially flat surface Like the photolithography process the qualityof the CMP process is layout pattern dependent. Specifically, an unevendistribution of a layout features across a die or a wafer can cause toomuch material to be removed in some places and not enough material to beremoved in other places, thus causing variations in the interconnectthickness and unacceptable variations in the capacitance and resistanceof the interconnect layer. The capacitance and resistance variationwithin the interconnect layer may alter the timing of a critical netcausing design failure.

The CMP process requires that dummy fill be added in the areas withoutinterconnect shapes so that a substantially uniform wafer topology isprovided to avoid dishing and improve center-to-edge uniformity.Traditionally, dummy fill is placed post-design. Thus, in thetraditional approach the designer is not aware of the dummy fillcharacteristics. Consequently, the dummy fill placed post-design mayadversely influence the design performance in a manner that has not beenevaluated by the designer. Also, because the conventional topology priorto the dummy fill is unconstrained, i.e., non-uniform, the post-designdummy fill will not be uniform and predictable. Therefore, in theconventional process, the capacitive coupling between the dummy fillregions and the neighboring active nets cannot be predicted by thedesigner.

As previously discussed, the dynamic array disclosed herein providesoptimal regularity by maximally filling all interconnect tracks fromgate electrode layer upward. If multiple nets are required in a singleinterconnect track, the interconnect track is split with a minimallyspaced gap. For example, track 809 representing the metal 1 conductionline in FIG. 8A represents three separate nets in the same track, whereeach net corresponds to a particular track segment. More specifically,there are two poly contact nets and a floating net to fill the trackwith minimal spacing between the track segments. The substantiallycomplete filling of tracks maintains the regular pattern that createsresonant images across the dynamic array. Also, the regular architectureof the dynamic array with maximally filled interconnect tracks ensuresthat the dummy fill is placed in a uniform manner across the die.Therefore, the regular architecture of the dynamic array assists the CMPprocess to produce substantially uniform results across the die/wafer.Also, the regular gate pattern of the dynamic array assists with gateetching uniformity (microloading). Additionally, the regulararchitecture of the dynamic array combined with the maximally filledinterconnect tracks allows the designer to analyze the capacitivecoupling effects associated with the maximally filled tracks during thedesign phase and prior to fabrication.

Because the dynamic array sets the size and spacing of the linearlyshaped features, i.e., tracks and contacts, in each mask layer, thedesign of the dynamic array can be optimized for the maximum capabilityof the manufacturing equipment and processes. That is to say, becausethe dynamic array is restricted to the regular architecture for eachlayer above diffusion, the manufacturer is capable of optimizing themanufacturing process for the specific characteristics of the regulararchitecture. It should be appreciated that with the dynamic array, themanufacturer does not have to be concerned with accommodating themanufacture of a widely varying set of arbitrarily-shaped layoutfeatures as is present in conventional unconstrained layouts.

An example of how the capability of manufacturing equipment can beoptimized is provided as follows. Consider that a 90 nm process has ametal 2 pitch of 280 nm. This metal 2 pitch of 280 nm is not set by themaximum capability of equipment. Rather, this metal 2 pitch of 280 nm isset by the lithography of the vias. With the via lithography issuesremoved, the maximum capability of the equipment allows for a metal 2pitch of about 220 nm. Thus, the design rules for metal 2 pitch includeabout 25% margin to account for the light interaction unpredictabilityin the via lithography.

The regular architecture implemented within the dynamic array allows thelight interaction unpredictability in the via lithography to be removed,thus allowing for a reduction in the metal 2 pitch margin. Such areduction in the metal 2 pitch margin allows for a more dense design,i.e., allows for optimization of chip area utilization. Additionally,with the restricted, i.e., regular, topology afforded by the dynamicarray, the margin in the design rules can be reduced. Moreover, not onlycan the excess margin beyond the capability of the process be reduced,the restricted topology afforded by the dynamic array also allows thenumber of required design rules to be substantially reduced. Forexample, a typical design rule set for an unconstrained topology couldhave more than 600 design rules. A design rule set for use with thedynamic array may have about 45 design rules. Therefore, the effortrequired to analyze and verify the design against the design rules isdecreased by more than a factor of ten with the restricted topology ofthe dynamic array.

When dealing with line end-to-line end gaps (i.e., tracksegment-to-track segment gaps) in a given track of a mask layer in thedynamic array, a limited number of light interactions exist. Thislimited number of light interactions can be identified, predicted, andaccurately compensated for ahead of time, dramatically reducing orcompletely eliminating the requirement for OPC/RET. The compensation forlight interactions at line end-to-line end gaps represents alithographic modification of the as-drawn feature, as opposed to acorrection based on modeling of interactions, e.g., OPC/RET, associatedwith the as-drawn feature.

Also, with the dynamic array, changes to the as-drawn layout are onlymade where needed. In contrast, OPC is performed over an entire layoutin a conventional design flow. In one embodiment, a correction model canbe implemented as part of the layout generation for the dynamic array.For example, due to the limited number of possible line end gapinteractions, a router can be programmed to insert a line break havingcharacteristics defined as a function of its surroundings, i.e., as afunction of its particular line end gap light interactions. It should befurther appreciated that the regular architecture of the dynamic arrayallows the line ends to be adjusted by changing vertices rather than byadding vertices. Thus, in contrast with unconstrained topologies thatrely on the OPC process, the dynamic array significantly reduces thecost and risk of mask production. Also, because the line end gapinteractions in the dynamic array can be accurately predicted in thedesign phase, compensation for the predicted line end gap interactionsduring the design phase does not increase risk of design failure.

In conventional unconstrained topologies, designers are required to haveknowledge of the physics associated with the manufacturing process dueto the presence of design dependent failures. With the grid-based systemof the dynamic array as disclosed herein, the logical design can beseparated from the physical design. More specifically, with the regulararchitecture of the dynamic array, the limited number of lightinteractions to be evaluated within the dynamic array, and the designindependent nature of the dynamic array, designs can be representedusing a grid point based netlist, as opposed to a physical netlist.

With the dynamic array, the design is not required to be represented interms of physical information. Rather, the design can be represented asa symbolic layout. Thus, the designer can represent the design from apure logic perspective without having to represent physicalcharacteristics, e.g., sizes, of the design. It should be understoodthat the grid-based netlist, when translated to physical, matches theoptimum design rules exactly for the dynamic array platform. When thegrid-based dynamic array moves to a new technology, e.g., smallertechnology, a grid-based netlist can be moved directly to the newtechnology because there is no physical data in the designrepresentation. In one embodiment, the grid-based dynamic array systemincludes a rules database, a grid-based (symbolic) netlist, and thedynamic array architecture.

It should be appreciated that the grid-based dynamic array eliminatestopology related failures associated with conventional unconstrainedarchitectures. Also, because the manufacturability of the grid-baseddynamic array is design independent, the yield of the design implementedon the dynamic array is independent of the design. Therefore, becausethe validity and yield of the dynamic array is preverified, thegrid-based netlist can be implemented on the dynamic array withpreverified yield performance.

FIG. 14 is an illustration showing a semiconductor chip structure 1400,in accordance with one embodiment of the present invention. Thesemiconductor chip structure 1400 represents an exemplary portion of asemiconductor chip, including a diffusion region 1401 having a number ofconductive lines 1403A-1403G defined thereover. The diffusion region1401 is defined in a substrate 1405, to define an active region for atleast one transistor device. The diffusion region 1401 can be defined tocover an area of arbitrary shape relative to the substrate 1405 surface.

The conductive lines 1403A-1403G are arranged to extend over thesubstrate 1405 in a common direction 1407. It should also be appreciatedthat each of the number of conductive lines 1403A-1403G are restrictedto extending over the diffusion region 1401 in the common direction1407. In one embodiment, the conductive lines 1403A-1403G definedimmediately over the substrate 1405 are polysilicon lines. In oneembodiment, each of the conductive lines 1403A-1403G is defined to haveessentially the same width 1409 in a direction perpendicular to thecommon direction 1407 of extension. In another embodiment, some of theconductive lines 1403A-1403G are defined to have different widthsrelative to the other conductive lines. However, regardless of the widthof the conductive lines 1403A-1403G, each of the conductive lines1403A-1403G is spaced apart from adjacent conductive lines according toessentially the same center-to-center pitch 1411.

As shown in FIG. 14, some of the conductive lines (1403B-1403E) extendover the diffusion region 1401, and other conductive lines (1403A,1403F, 1403G) extend over non-diffusion portions the substrate 1405. Itshould be appreciated that the conductive lines 1403A-1403G maintaintheir width 1409 and pitch 1411 regardless of whether they are definedover diffusion region 1401 or not. Also, it should be appreciated thatthe conductive lines 1403A-1403G maintain essentially the same length1413 regardless of whether they are defined over diffusion region 1401or not, thereby maximizing lithographic reinforcement between theconductive lines 1403A-1403G across the substrate. In this manner, someof the conductive lines, e.g., 1403D, defined over the diffusion region1401 include a necessary active portion 1415, and one or more uniformityextending portions 1417.

It should be appreciated that the semiconductor chip structure 1400represents a portion of the dynamic array described above with respectto FIGS. 2-13D. Therefore, it should be understood that the uniformityextending portions 1417 of the conductive lines (1403B-1403E) arepresent to provide lithographic reinforcement of neighboring conductivelines 1403A-1403G. Also, although they may not be required for circuitoperation, each of conductive lines 1403A, 1403F, and 1403G are presentto provide lithographic reinforcement of neighboring conductive lines1403A-1403G.

The concept of the necessary active portion 1415 and the uniformityextending portions 1417 also applies to higher level interconnectlayers. As previously described with regard to the dynamic arrayarchitecture, adjacent interconnect layers traverse over the substratein transverse directions, e.g., perpendicular or diagonal directions, toenable routing/connectivity required by the logic device implementedwithin the dynamic array. As with the conductive lines 1403A-1403G, eachof the conductive lines within an interconnect layer may include arequired portion (necessary active portion) to enable requiredrouting/connectivity, and a non-required portion (uniformity extendingportion) to provide lithographic reinforcement to neighboring conductivelines. Also, as with the conductive lines 1403A-1403G, the conductivelines within an interconnect layer extend in a common direction over thesubstrate, have essentially the same width, and are spaced apart fromeach other according to an essentially constant pitch.

In one embodiment, conductive lines within an interconnect layer followessentially the same ratio between line width and line spacing. Forexample, at 90 nm the metal 4 pitch is 280 nm with a line width and linespacing equal to 140 nm. Larger conductive lines can be printed on alarger line pitch if the line width is equal to the line spacing.

FIG. 14A shows an annotated version of FIG. 14. The features depicted inFIG. 14A are exactly the same as the features depicted in FIG. 14. FIG.14A shows each of the conductive lines 1403B and 1403C to have auniformity extending portion 14 a 01 as measured in the common direction1407. FIG. 14A shows each of the conductive lines 1403D and 1403E tohave a uniformity extending portion 14 a 03 as measured in the commondirection 1407. FIG. 14A shows each of the conductive lines 1403B,1403C, 1403D, and 1403E to have a uniformity extending portion 14 a 05as measured in the common direction 1407. FIG. 15 shows an examplelayout architecture defined in accordance with one embodiment of thepresent invention. The layout architecture follows a grid pattern and isbased upon a horizontal grid and a vertical grid. The horizontal grid isset by the poly gate pitch. The vertical pitch is set by the metal1/metal 3 pitch. All of the rectangular shapes should be centered on agrid point. The layout architecture minimizes the use of bends toeliminate unpredictable lithographic interactions. Bends are allowed onthe diffusion layer to control transistor device sizes. Other layersshould be rectangular in shape and fixed in one dimension.

FIG. 15A shows an annotated version of FIG. 15. The features depicted inFIG. 15A are exactly the same as the features depicted in FIG. 15. FIG.15A shows a first electrical connection 15 a 01 (as denoted by the heavysolid black line). FIG. 15A shows a second electrical connection 15 a 03(as denoted by the heavy dashed black line).

The invention described herein can be embodied as computer readable codeon a computer readable medium. The computer readable medium is any datastorage device that can store data which can be thereafter be read by acomputer system. Examples of the computer readable medium include harddrives, network attached storage (NAS), read-only memory, random-accessmemory, CD-ROMs, CD-Rs, CD-RWs, magnetic tapes, and other optical andnon-optical data storage devices. The computer readable medium can alsobe distributed over a network coupled computer systems so that thecomputer readable code is stored and executed in a distributed fashion.Additionally, a graphical user interface (GUI) implemented as computerreadable code on a computer readable medium can be developed to providea user interface for performing any embodiment of the present invention.

While this invention has been described in terms of several embodiments,it will be appreciated that those skilled in the art upon reading thepreceding specifications and studying the drawings will realize variousalterations, additions, permutations and equivalents thereof. Therefore,it is intended that the present invention includes all such alterations,additions, permutations, and equivalents as fall within the true spiritand scope of the invention.

What is claimed is:
 1. A semiconductor chip, comprising: gate structuresformed within a region of the semiconductor chip, the gate structurespositioned in accordance with a gate horizontal grid that includes atleast seven gate gridlines, wherein adjacent gate gridlines areseparated from each other by a gate pitch of less than or equal to about193 nanometers, each gate structure in the region having a substantiallyrectangular shape with a width of less than or equal to about 45nanometers and positioned to extend lengthwise in a y-direction in asubstantially centered manner along a corresponding gate gridline,wherein each gate gridline has at least one gate structure positionedthereon, wherein each pair of gate structures that are adjacentlypositioned on a same gate gridline are separated by a line end-to-lineend gap of less than or equal to about 193 nanometers, wherein at leastone gate structure within the region is a first-transistor-type-onlygate structure that forms at least one gate electrode of at least onetransistor of a first transistor type and does not form a gate electrodeof a transistor of a second transistor type, wherein at least one gatestructure within the region is a second-transistor-type-only gatestructure that forms at least one gate electrode of at least onetransistor of the second transistor type and does not form a gateelectrode of a transistor of the first transistor type, wherein a totalnumber of first-transistor-type-only gate structures within the regionis equal to a total number of second-transistor-type-only gatestructures within the region; a first-metal layer formed above topsurfaces of the gate structures within the region of the semiconductorchip, the first-metal layer positioned first in a stack of metal layerscounting upward from top surfaces of the gate structures, thefirst-metal layer separated from the top surfaces of the gate structuresby at least one dielectric material, adjacent metal layers in the stackof metal layers separated by at least one dielectric material, whereinthe first-metal layer includes first-metal structures positioned inaccordance with a first-metal vertical grid, the first-metal verticalgrid including at least eight first-metal gridlines, each first-metalstructure in the region having a substantially rectangular shape andpositioned to extend lengthwise in an x-direction in a substantiallycentered manner on a corresponding first-metal gridline, eachfirst-metal structure in the region having at least one adjacentfirst-metal structure positioned next to each of its sides in accordancewith a y-coordinate spacing of less than or equal to 193 nanometers,wherein each pair of first-metal structures that are adjacentlypositioned on a same first-metal gridline are separated by a lineend-to-line end gap of less than or equal to about 193 nanometers; andat least six contact structures formed within the region of thesemiconductor chip, wherein at least six gate structures within theregion have a respective top surface in physical and electrical contactwith a corresponding one of the at least six contact structures, each ofthe at least six contact structures having a substantially rectangularshape with a corresponding length greater than a corresponding width andwith the corresponding length oriented in the x-direction, each of theat least six contact structures positioned and sized to overlap bothedges of the top surface of the gate structure to which it is inphysical and electrical contact, wherein the region includes at leastfour transistors of the first transistor type and at least fourtransistors of the second transistor type that collectively form part ofa logic circuit, wherein the logic circuit includes electricalconnections that collectively include first-metal structures positionedon at least five of the at least eight first-metal gridlines.
 2. Thesemiconductor chip as recited in claim 1, wherein the region includes asecond-metal layer including second-metal structures positioned inaccordance with a second-metal horizontal grid, the second-metalhorizontal grid including at least eight second-metal gridlines, eachsecond-metal structure in the region having at least one adjacentsecond-metal structure positioned next to each of its sides inaccordance with an x-coordinate spacing of less than or equal to 193nanometers, each second-metal structure in the region having asubstantially rectangular shape and positioned to extend lengthwise inthe y-direction in a substantially centered manner along a correspondingsecond-metal gridline, wherein at least eight of the at least eightsecond-metal gridlines have at least one second-metal structurepositioned thereon, wherein each pair of second-metal structures thatare adjacently positioned on a same second-metal gridline are separatedby a line end-to-line end gap, wherein the second-metal layer ispositioned second in the stack of metal layers formed above the gatestructures counting upward from the top surfaces of the gate structures.3. The semiconductor chip as recited in claim 2, wherein eachfirst-metal structure in the region has a width measured in they-direction that is either a first width or a second width differentthan the first width.
 4. The semiconductor chip as recited in claim 3,wherein at least one gate structure within the region that forms atleast one gate electrode of at least one transistor of a firsttransistor type and does not form a gate electrode of a transistor of asecond transistor type is electrically connected to at least one gatestructure within the region that forms at least one gate electrode of atleast one transistor of the second transistor type and does not form agate electrode of a transistor of the first transistor type through anelectrical connection that includes at least one first-metal structureand at least one second-metal structure.
 5. The semiconductor chip asrecited in claim 2, wherein the at least six contact structures arepositioned in accordance with a contact vertical grid, the contactvertical grid including contact gridlines extending in the x-direction,each of the at least six contact structures positioned to extendlengthwise in the x-direction in a substantially centered manner along acorresponding contact gridline, and at least two of the at least sixcontact structures positioned to also extend lengthwise in thex-direction in a substantially centered manner along a correspondingfirst-metal gridline.
 6. The semiconductor chip as recited in claim 2,wherein each second-metal structure in the region is positioned next toat least one other second-metal structure on a first side in accordancewith a second-metal pitch and is positioned next to at least one othersecond-metal structure on a second side in accordance with thesecond-metal pitch, wherein the second-metal pitch is measured in thex-direction and is equal to the gate pitch.
 7. The semiconductor chip asrecited in claim 6, wherein each second-metal structure in the regionhas a substantially equal width as measured in the x-direction.
 8. Thesemiconductor chip as recited in claim 7, wherein each first-metalstructure in the region has a width measured in the y-direction that iseither a first width or a second width different than the first width.9. The semiconductor chip as recited in claim 7, wherein the region hasa size of 1930 nanometers as measured in the x-direction and a size of1930 nanometers as measured in the y-direction.
 10. The semiconductorchip as recited in claim 7, wherein the region includes a third-metallayer including third-metal structures positioned in accordance with athird-metal vertical grid, the third-metal vertical grid including atleast eight third-metal gridlines, each third-metal structure in theregion having at least one adjacent third-metal structure positionednext to each of its sides in accordance with a y-coordinate spacing ofless than or equal to 193 nanometers, each third-metal structure in theregion having a substantially rectangular shape and positioned to extendlengthwise in the x-direction in a substantially centered manner along acorresponding third-metal gridline, wherein at least eight of the atleast eight third-metal gridlines have at least one third-metalstructure positioned thereon, wherein each pair of third-metalstructures that are adjacently positioned on a same third-metal gridlineare separated by a line end-to-line end gap, wherein the third-metallayer is positioned third in the stack of metal layers formed above thegate structures counting upward from the top surfaces of the gatestructures.
 11. The semiconductor chip as recited in claim 10, whereineach second-metal structure in the region is positioned next to at leastone other second-metal structure on a first side in accordance with asecond-metal pitch and is positioned next to at least one othersecond-metal structure on a second side in accordance with thesecond-metal pitch, wherein the second-metal pitch is measured in thex-direction and is equal to the gate pitch.
 12. The semiconductor chipas recited in claim 10, wherein the region includes a fourth-metal layerincluding fourth-metal structures positioned in accordance with afourth-metal horizontal grid, the fourth-metal horizontal grid includingat least eight fourth-metal gridlines, each fourth-metal structure inthe region having at least one adjacent fourth-metal structurepositioned next to each of its sides in accordance with an x-coordinatespacing of less than or equal to 193 nanometers, each fourth-metalstructure in the region having a substantially rectangular shape andpositioned to extend lengthwise in the y-direction in a substantiallycentered manner along a corresponding fourth-metal gridline, wherein atleast eight of the at least eight fourth-metal gridlines have at leastone fourth-metal structure positioned thereon, wherein each pair offourth-metal structures that are adjacently positioned on a samefourth-metal gridline are separated by a line end-to-line end gap,wherein the fourth-metal layer is positioned fourth in the stack ofmetal layers formed above the gate structures counting upward from thetop surfaces of the gate structures.
 13. The semiconductor chip asrecited in claim 2, wherein each first-metal structure in the region ispositioned next to at least one other first-metal structure on a firstside in accordance with a first-metal pitch and is positioned next to atleast one other first-metal structure on a second side in accordancewith the first-metal pitch.
 14. The semiconductor chip as recited inclaim 13, wherein the region has a size of 1930 nanometers as measuredin the x-direction and a size of 1930 nanometers as measured in they-direction.
 15. The semiconductor chip as recited in claim 1, whereineach transistor within the region of the semiconductor chip is formed inpart by a corresponding diffusion region, wherein each diffusion regionthat forms part of at least one transistor within the region of thesemiconductor chip has a substantially rectangular shape.
 16. Thesemiconductor chip as recited in claim 1, wherein the at least fourtransistors of the first transistor type and the at least fourtransistors of the second transistor type within the region collectivelyform part of an inverting two-to-one multiplexer.
 17. The semiconductorchip as recited in claim 1, wherein at least one of the at least sixcontact structures is in physical and electrical contact with, and issubstantially centered in the x-direction on, a gate structure withinthe region that forms at least one gate electrode of at least onetransistor of the first transistor type and that does not form a gateelectrode of a transistor of the second transistor type.
 18. Thesemiconductor chip as recited in claim 1, wherein each of at least fourof the first-metal gridlines has at least two first-metal structurespositioned thereon within the region, wherein each of the at least twofirst-metal structures positioned on the at least four of thefirst-metal gridlines is positioned next to and spaced apart from atleast one other first-metal structure in accordance with a fixed pitch.19. The semiconductor chip as recited in claim 1, wherein eachfirst-metal structure positioned on any first-metal gridline within theregion is positioned next to and spaced apart from at least one otherfirst-metal structure in accordance with a fixed pitch.
 20. Thesemiconductor chip as recited in claim 1, wherein the region includes asecond-metal layer including second-metal structures positioned inaccordance with a second-metal horizontal grid, the second-metalhorizontal grid including at least eight second-metal gridlines, eachsecond-metal structure in the region having at least one adjacentsecond-metal structure positioned next to each of its sides inaccordance with an x-coordinate spacing of less than or equal to 193nanometers, each second-metal structure in the region having asubstantially rectangular shape and positioned to extend lengthwise inthe y-direction in a substantially centered manner along a correspondingsecond-metal gridline, wherein at least eight of the at least eightsecond-metal gridlines have at least one second-metal structurepositioned thereon, wherein each pair of second-metal structures thatare adjacently positioned on a same second-metal gridline are separatedby a line end-to-line end gap, wherein the second-metal layer ispositioned second in the stack of metal layers formed above the gatestructures counting upward from the top surfaces of the gate structures,wherein the region includes a third-metal layer including third-metalstructures positioned in accordance with a third-metal vertical grid,the third-metal vertical grid including at least eight third-metalgridlines, each third-metal structure in the region having at least oneadjacent third-metal structure positioned next to each of its sides inaccordance with a y-coordinate spacing of less than or equal to 193nanometers, each third-metal structure in the third-metal layer having asubstantially rectangular shape and positioned to extend lengthwise inthe x-direction in a substantially centered manner along a correspondingthird-metal gridline, wherein at least eight of the at least eightthird-metal gridlines have at least one third-metal structure positionedthereon, wherein each pair of third-metal structures that are adjacentlypositioned on a same third-metal gridline are separated by a lineend-to-line end gap, wherein the third-metal layer is positioned thirdin the stack of metal layers formed above the gate structures countingupward from the top surfaces of the gate structures.
 21. Thesemiconductor chip as recited in claim 20, wherein the region includes afourth-metal layer including fourth-metal structures positioned inaccordance with a fourth-metal horizontal grid, the fourth-metalhorizontal grid including at least eight fourth-metal gridlines, eachfourth-metal structure in the region having at least one adjacentfourth-metal structure positioned next to each of its sides inaccordance with an x-coordinate spacing of less than or equal to 193nanometers, each fourth-metal structure in the region having asubstantially rectangular shape and positioned to extend lengthwise inthe y-direction in a substantially centered manner along a correspondingfourth-metal gridline, wherein at least eight of the at least eightfourth-metal gridlines have at least one fourth-metal structurepositioned thereon, wherein each pair of fourth-metal structures thatare adjacently positioned on a same fourth-metal gridline are separatedby a line end-to-line end gap, wherein the fourth-metal layer ispositioned fourth in the stack of metal layers formed above the gatestructures counting upward from the top surfaces of the gate structures.22. The semiconductor chip as recited in claim 20, wherein the at leastfour transistors of the first transistor type include a first transistorof the first transistor type, wherein the at least four transistors ofthe second transistor type include a first transistor of the secondtransistor type, wherein a gate structure forming a gate electrode ofthe first transistor of the first transistor type is positioned on agiven gate gridline, wherein a gate structure forming a gate electrodeof the first transistor of the second transistor type is also positionedon the given gate gridline, wherein no other transistor is positioned onthe given gate gridline between the gate structures that form the gateelectrodes of the first transistor of the first transistor type and thefirst transistor of the second transistor type, wherein each transistorwithin the region of the semiconductor chip is formed in part by acorresponding diffusion region, wherein a diffusion region of the firsttransistor of the first transistor type is electrically connected to adiffusion region of the first transistor of the second transistor type,wherein the at least six contact structures include a contact structuresubstantially centered in the x-direction on the given gate gridline ata location between the diffusion regions of the first transistor of thefirst transistor type and the first transistor of the second transistortype.
 23. The semiconductor chip as recited in claim 22, wherein anelectrical connection between the diffusion region of the firsttransistor of the first transistor type and the diffusion region of thefirst transistor of the second transistor type includes at least onefirst-metal structure and at least one second-metal structure.
 24. Thesemiconductor chip as recited in claim 23, wherein the gate electrode ofthe first transistor of the first transistor type is electricallyconnected to the gate electrode of the first transistor of the secondtransistor type.
 25. The semiconductor chip as recited in claim 1,wherein the at least four transistors of the first transistor typeinclude a first transistor of the first transistor type, wherein the atleast four transistors of the second transistor type include a firsttransistor of the second transistor type, wherein a gate structureforming a gate electrode of the first transistor of the first transistortype is positioned on a given gate gridline, wherein a gate structureforming a gate electrode of the first transistor of the secondtransistor type is also positioned on the given gate gridline, whereinno other transistor is positioned on the given gate gridline between thegate structures that form the gate electrodes of the first transistor ofthe first transistor type and the first transistor of the secondtransistor type, wherein each transistor within the region of thesemiconductor chip is formed in part by a corresponding diffusionregion, wherein a diffusion region of the first transistor of the firsttransistor type is electrically connected to a diffusion region of thefirst transistor of the second transistor type, wherein the at least sixcontact structures include a contact structure substantially centered inthe x-direction on the given gate gridline at a location between thediffusion regions of the first transistor of the first transistor typeand the first transistor of the second transistor type.
 26. Thesemiconductor chip as recited in claim 25, wherein an electricalconnection between the diffusion region of the first transistor of thefirst transistor type and the diffusion region of the first transistorof the second transistor type includes at least one first-metalstructure and at least one second-metal structure in a second-metallayer within the region, wherein the second-metal layer includessecond-metal structures positioned in accordance with a second-metalhorizontal grid, the second-metal horizontal grid including at leasteight second-metal gridlines, each second-metal structure in the regionhaving at least one adjacent second-metal structure positioned next toeach of its sides in accordance with an x-coordinate spacing of lessthan or equal to 193 nanometers, each second-metal structure in theregion having a substantially rectangular shape and positioned to extendlengthwise in the y-direction in a substantially centered manner along acorresponding second-metal gridline, wherein at least eight of the atleast eight second-metal gridlines have at least one second-metalstructure positioned thereon, wherein each pair of second-metalstructures that are adjacently positioned on a same second-metalgridline are separated by a line end-to-line end gap, wherein thesecond-metal layer is positioned second in the stack of metal layersformed above the gate structures counting upward from the top surfacesof the gate structures.
 27. The semiconductor chip as recited in claim1, wherein the at least four transistors of the first transistor typeare collectively separated from the at least four transistors of thesecond transistor type by an inner region that does not include anothertransistor.
 28. The semiconductor chip as recited in claim 27, whereinat least one of the at least six contact structures is in physical andelectrical contact with, and is substantially centered in thex-direction on, a given gate structure within the region that forms atleast one gate electrode of at least one transistor, wherein the atleast one of the at least six contact structures is positioned over theinner region.
 29. A semiconductor chip, comprising: gate structuresformed within a region of the semiconductor chip, the gate structurespositioned in accordance with a gate horizontal grid that includes atleast seven gate gridlines, wherein adjacent gate gridlines areseparated from each other by a gate pitch of less than or equal to about193 nanometers, each gate structure in the region having a substantiallyrectangular shape with a width of less than or equal to about 45nanometers and positioned to extend lengthwise in a y-direction in asubstantially centered manner along a corresponding gate gridline,wherein each gate gridline has at least one gate structure positionedthereon, wherein each pair of gate structures that are adjacentlypositioned on a same gate gridline are separated by a line end-to-lineend gap of less than or equal to about 193 nanometers, wherein at leastone gate structure within the region is a first-transistor-type-onlygate structure that forms at least one gate electrode of at least onetransistor of a first transistor type and does not form a gate electrodeof a transistor of a second transistor type, wherein at least one gatestructure within the region is a second-transistor-type-only gatestructure that forms at least one gate electrode of at least onetransistor of the second transistor type and does not form a gateelectrode of a transistor of the first transistor type, wherein a totalnumber of first-transistor-type-only gate structures within the regionis equal to a total number of second-transistor-type-only gatestructures within the region; a number of contact structures formedwithin the region of the semiconductor chip, wherein each gate structurethat forms any transistor gate electrode within the region has arespective top surface in physical and electrical contact with acorresponding contact structure having a substantially rectangularshape, wherein each contact structure that contacts a given gatestructure that forms any transistor gate electrode does not contactanother gate structure, wherein each contact structure having acorresponding length greater than a corresponding width is oriented tohave its corresponding length extend in an x-direction, wherein eachtransistor within the region is formed in part by a correspondingdiffusion region, wherein each diffusion region that forms part of anytransistor within the region has a substantially rectangular shape,wherein the region includes at least four transistors of the firsttransistor type and at least four transistors of the second transistortype that collectively form a portion of a multiplexer or a portion of alatch, wherein at least one first-transistor-type-only gate structurewithin the region is included within the portion of the multiplexer orthe portion of the latch, wherein at least onesecond-transistor-type-only gate structure within the region is includedwithin the portion of the multiplexer or the portion of the latch,wherein the at least four transistors of the first transistor typeinclude a first transistor of the first transistor type, wherein the atleast four transistors of the second transistor type include a firsttransistor of the second transistor type, wherein a first gate structureforms both a gate electrode of the first transistor of the firsttransistor type and a gate electrode of the first transistor of thesecond transistor type.
 30. A semiconductor chip, comprising: gatestructures formed within a region of the semiconductor chip, the gatestructures positioned in accordance with a gate horizontal grid thatincludes a number of gate gridlines, wherein adjacent gate gridlines areseparated from each other by a gate pitch of less than or equal to about193 nanometers, each gate structure in the region having a substantiallyrectangular shape with a width of less than or equal to about 45nanometers and positioned to extend lengthwise in a y-direction in asubstantially centered manner along a corresponding gate gridline,wherein each gate gridline has at least one gate structure positionedthereon, wherein each pair of gate structures that are adjacentlypositioned on a same gate gridline are separated by a line end-to-lineend gap of less than or equal to about 193 nanometers, wherein at leastone gate structure within the region is a first-transistor-type-onlygate structure that forms at least one gate electrode of at least onetransistor of a first transistor type and does not form a gate electrodeof a transistor of a second transistor type, wherein at least one gatestructure within the region is a second-transistor-type-only gatestructure that forms at least one gate electrode of at least onetransistor of the second transistor type and does not form a gateelectrode of a transistor of the first transistor type, wherein a totalnumber of first-transistor-type-only gate structures within the regionis equal to a total number of second-transistor-type-only gatestructures within the region; a number of contact structures formedwithin the region of the semiconductor chip, wherein each of at leastsix gate structures within the region has a respective top surface inphysical and electrical contact with a corresponding contact structurehaving a substantially rectangular shape, wherein each contact structureis centered in an x-direction on the gate structure with which itphysical contacts, wherein each contact structure that has thesubstantially rectangular shape has a corresponding length greater thana corresponding width and is oriented to have its corresponding lengthextend in an x-direction, wherein each corresponding contact structureis in physical contact with only one gate structure, wherein eachtransistor within the region is formed in part by a correspondingdiffusion region, wherein each diffusion region that forms part of anytransistor within the region has a substantially rectangular shape,wherein the region includes at least four transistors of the firsttransistor type and at least four transistors of the second transistortype that collectively form a portion of a multiplexer or a portion of alatch, wherein at least one first-transistor-type-only gate structurewithin the region is included within the portion of the multiplexer orthe portion of the latch, wherein at least onesecond-transistor-type-only gate structure within the region is includedwithin the portion of the multiplexer or the portion of the latch,wherein both a gate electrode of a transistor of a first transistor typeand a gate electrode of a transistor of a second transistor type areformed by a same gate structure within the region.